JPS5780789A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5780789A JPS5780789A JP15744980A JP15744980A JPS5780789A JP S5780789 A JPS5780789 A JP S5780789A JP 15744980 A JP15744980 A JP 15744980A JP 15744980 A JP15744980 A JP 15744980A JP S5780789 A JPS5780789 A JP S5780789A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- semiconductor laser
- laser device
- algaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To improve the yield of a semiconductor laser device by sequentially forming a p type layer and an n type layer having forbidden band width wider than an active layer on a p type clad layer, and forming a V-shaped groove to reach a p type layer readily controlled in etching through the n type layer. CONSTITUTION:An n type AlGaAs layer 2, a p type GaAs active layer 3 and a p type AlGaAs clad layer 4 are sequentially formed on an n type GaAs substrate 1, a P type GaAs layer 11 and an n type AlGaAs layer 12 are formed on the layer 4, and an n type AlGaAs layer 13 is further formed on the layer 12. The forbidded band width of the layer 12 is formed wider than the layer 3, and a V-shaped groove 7a reaching the layer 11 at the end is formed through the layer 12 to reach the layer 11 at the end of the groove 7a, thereby improving the yield of the semiconductor laser device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15744980A JPS5780789A (en) | 1980-11-07 | 1980-11-07 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15744980A JPS5780789A (en) | 1980-11-07 | 1980-11-07 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5780789A true JPS5780789A (en) | 1982-05-20 |
Family
ID=15649896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15744980A Pending JPS5780789A (en) | 1980-11-07 | 1980-11-07 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5780789A (en) |
-
1980
- 1980-11-07 JP JP15744980A patent/JPS5780789A/en active Pending
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