JPS5694793A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5694793A
JPS5694793A JP17186779A JP17186779A JPS5694793A JP S5694793 A JPS5694793 A JP S5694793A JP 17186779 A JP17186779 A JP 17186779A JP 17186779 A JP17186779 A JP 17186779A JP S5694793 A JPS5694793 A JP S5694793A
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor layer
plane
laser resonance
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17186779A
Other languages
Japanese (ja)
Inventor
Toshio Tanaka
Yoshito Ikuwa
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17186779A priority Critical patent/JPS5694793A/en
Publication of JPS5694793A publication Critical patent/JPS5694793A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve a laser output by a method wherein a cross plane of an intermediate semiconductor and a P-N junction plane perpendicular to laser resonance planes which are perpendicular to interfaces of three semiconductor layer holding pinchedly a semiconductor layer having a narrow forbidden band width, is made the 4th semiconductor area. CONSTITUTION:Against a pair of laser resonance planes perpendicular to two interfaces of three semiconductor layers which hold intermediately a semiconductor layer having a narrow forbidden band width, the entire of a P-N junction plane or a main part excluding the laser resonance planes is perpendicular. The expansion part of the cross plane of the P-N junction plane and the 2nd semiconductor layer near the laser resonance plane is made the 4th semiconductor area having a forbidden band width wider than the 2nd semiconductor layer. For example, AlGaAs clad layers 2, 4 holding intermediately a GaAs active layer 3 is formed on a GaAs substrate 1, and a P<+> type drive layer 6 is bent in the vicinity of the laser resonance planes 9, thus, making a luminous area 10 hit an AlGa layer 11. With this, a high output can be obtained with a low threshold value.
JP17186779A 1979-12-28 1979-12-28 Semiconductor laser device Pending JPS5694793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17186779A JPS5694793A (en) 1979-12-28 1979-12-28 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17186779A JPS5694793A (en) 1979-12-28 1979-12-28 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5694793A true JPS5694793A (en) 1981-07-31

Family

ID=15931250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17186779A Pending JPS5694793A (en) 1979-12-28 1979-12-28 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5694793A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3232344A1 (en) * 1981-08-31 1983-03-10 Mitsubishi Denki K.K., Tokyo SEMICONDUCTOR LASER
DE3246296A1 (en) 1981-12-14 1983-07-28 Mitsubishi Denki K.K., Tokyo Injected solid-state laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3232344A1 (en) * 1981-08-31 1983-03-10 Mitsubishi Denki K.K., Tokyo SEMICONDUCTOR LASER
US4592061A (en) * 1981-08-31 1986-05-27 Mitsubishi Denki Kabushiki Kaisha Transverse junction stripe laser with steps at the end faces
DE3246296A1 (en) 1981-12-14 1983-07-28 Mitsubishi Denki K.K., Tokyo Injected solid-state laser

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