JPS5580386A - Manufacture of semiconductor light emitting device - Google Patents
Manufacture of semiconductor light emitting deviceInfo
- Publication number
- JPS5580386A JPS5580386A JP15355978A JP15355978A JPS5580386A JP S5580386 A JPS5580386 A JP S5580386A JP 15355978 A JP15355978 A JP 15355978A JP 15355978 A JP15355978 A JP 15355978A JP S5580386 A JPS5580386 A JP S5580386A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- width
- light emitting
- region
- type inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To simplify and stabilize transverse mode oscillation and thus to improve light emitting characteristic by a method wherein a current carrying region is formed to have its width almost equalized to that of a light emitting region, and an electrode is provided on an activated layer through a thin clad layer.
CONSTITUTION: An n-type InP clad layer 2, In0.78Ga0.24As0.55.P0,45 activated layer 3, thin p-type InP clad layer 4, p-type In0.76Ga0.24As0.55P0.45 loss layer 5 are laminated on an n-type InP substrate 1, and a groove with width w is formed on the layer 5. An n-type InP waveguide layer 6 and a junction layer 7 of p-type In0.76Ga0.24As0.55P0.45 are further formed thereon, and then an Au mask with width s is provided to proton implantation, thereby preventing a current between electrodes 7, 8 from flowing in region 9. The width w of a current carrying region and the width s of a light emitting region are thus arranged to be almost equalized, and the clad layer 4 on the activated layer 3 is made thin, therefore a transverse mode according to the loss layer 5 and the waveguide layer 6 is unified and stabilized, and the linearity of a light output is improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53153559A JPS593872B2 (en) | 1978-12-11 | 1978-12-11 | Method for manufacturing semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53153559A JPS593872B2 (en) | 1978-12-11 | 1978-12-11 | Method for manufacturing semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5580386A true JPS5580386A (en) | 1980-06-17 |
JPS593872B2 JPS593872B2 (en) | 1984-01-26 |
Family
ID=15565135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53153559A Expired JPS593872B2 (en) | 1978-12-11 | 1978-12-11 | Method for manufacturing semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS593872B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5736882A (en) * | 1980-08-15 | 1982-02-27 | Nec Corp | Stripe type double hetero junction laser element |
JPS5810885A (en) * | 1981-07-02 | 1983-01-21 | インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン | Injection laser |
-
1978
- 1978-12-11 JP JP53153559A patent/JPS593872B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5736882A (en) * | 1980-08-15 | 1982-02-27 | Nec Corp | Stripe type double hetero junction laser element |
JPS5810885A (en) * | 1981-07-02 | 1983-01-21 | インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン | Injection laser |
Also Published As
Publication number | Publication date |
---|---|
JPS593872B2 (en) | 1984-01-26 |
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