JPS5580386A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS5580386A
JPS5580386A JP15355978A JP15355978A JPS5580386A JP S5580386 A JPS5580386 A JP S5580386A JP 15355978 A JP15355978 A JP 15355978A JP 15355978 A JP15355978 A JP 15355978A JP S5580386 A JPS5580386 A JP S5580386A
Authority
JP
Japan
Prior art keywords
layer
width
light emitting
region
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15355978A
Other languages
Japanese (ja)
Other versions
JPS593872B2 (en
Inventor
Hiroshi Nishi
Mitsuhiro Yano
Tsugio Kumai
Kimito Takusagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53153559A priority Critical patent/JPS593872B2/en
Publication of JPS5580386A publication Critical patent/JPS5580386A/en
Publication of JPS593872B2 publication Critical patent/JPS593872B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To simplify and stabilize transverse mode oscillation and thus to improve light emitting characteristic by a method wherein a current carrying region is formed to have its width almost equalized to that of a light emitting region, and an electrode is provided on an activated layer through a thin clad layer.
CONSTITUTION: An n-type InP clad layer 2, In0.78Ga0.24As0.55.P0,45 activated layer 3, thin p-type InP clad layer 4, p-type In0.76Ga0.24As0.55P0.45 loss layer 5 are laminated on an n-type InP substrate 1, and a groove with width w is formed on the layer 5. An n-type InP waveguide layer 6 and a junction layer 7 of p-type In0.76Ga0.24As0.55P0.45 are further formed thereon, and then an Au mask with width s is provided to proton implantation, thereby preventing a current between electrodes 7, 8 from flowing in region 9. The width w of a current carrying region and the width s of a light emitting region are thus arranged to be almost equalized, and the clad layer 4 on the activated layer 3 is made thin, therefore a transverse mode according to the loss layer 5 and the waveguide layer 6 is unified and stabilized, and the linearity of a light output is improved.
COPYRIGHT: (C)1980,JPO&Japio
JP53153559A 1978-12-11 1978-12-11 Method for manufacturing semiconductor light emitting device Expired JPS593872B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53153559A JPS593872B2 (en) 1978-12-11 1978-12-11 Method for manufacturing semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53153559A JPS593872B2 (en) 1978-12-11 1978-12-11 Method for manufacturing semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS5580386A true JPS5580386A (en) 1980-06-17
JPS593872B2 JPS593872B2 (en) 1984-01-26

Family

ID=15565135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53153559A Expired JPS593872B2 (en) 1978-12-11 1978-12-11 Method for manufacturing semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS593872B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736882A (en) * 1980-08-15 1982-02-27 Nec Corp Stripe type double hetero junction laser element
JPS5810885A (en) * 1981-07-02 1983-01-21 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン Injection laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736882A (en) * 1980-08-15 1982-02-27 Nec Corp Stripe type double hetero junction laser element
JPS5810885A (en) * 1981-07-02 1983-01-21 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン Injection laser

Also Published As

Publication number Publication date
JPS593872B2 (en) 1984-01-26

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