JPS5638885A - Light emission semiconductor device - Google Patents

Light emission semiconductor device

Info

Publication number
JPS5638885A
JPS5638885A JP11505779A JP11505779A JPS5638885A JP S5638885 A JPS5638885 A JP S5638885A JP 11505779 A JP11505779 A JP 11505779A JP 11505779 A JP11505779 A JP 11505779A JP S5638885 A JPS5638885 A JP S5638885A
Authority
JP
Japan
Prior art keywords
layer
type
light emission
clad
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11505779A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yano
Hiroshi Nishi
Kimito Takusagawa
Yorimitsu Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11505779A priority Critical patent/JPS5638885A/en
Publication of JPS5638885A publication Critical patent/JPS5638885A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To reduce a threshold current, by providing in one of clad layers over and under an active layer a light emission region defining layer whose refractive index is larger than that of the clad layer and whose electroconductive type is opposite to that of the clad layer and an outer diffusion region which independently defines the width of current enclosure of the light emission region defining layer due to outward diffusion of an impurity. CONSTITUTION:P type clad layers 3, 5 and an N type clad layer 7 are made over and under the active layer 6 of a device comprising an anode 1, a cathode 9, a P type contact layer 2 and an N type substrate 8. In one of the clad layers, for example, in the clad layer 5, an N type light emission defining layer 4 whose refractive index is larger than that of the layers 3, 5 and whose electroconductive type is opposite to that of the layers 3, 5, is produced to define a light enclosure width W. An N type outer diffusion region OD is provided outside the layer 4 to limit an electrical current enclosure width S to a small value by a P-N junction. As a result, a threshold current is substantially reduced because all an injected current flows through the light emission region.
JP11505779A 1979-09-07 1979-09-07 Light emission semiconductor device Pending JPS5638885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11505779A JPS5638885A (en) 1979-09-07 1979-09-07 Light emission semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11505779A JPS5638885A (en) 1979-09-07 1979-09-07 Light emission semiconductor device

Publications (1)

Publication Number Publication Date
JPS5638885A true JPS5638885A (en) 1981-04-14

Family

ID=14653098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11505779A Pending JPS5638885A (en) 1979-09-07 1979-09-07 Light emission semiconductor device

Country Status (1)

Country Link
JP (1) JPS5638885A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603181A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device
JPS62205681A (en) * 1986-03-06 1987-09-10 Toshiba Corp Manufacture of embedded type semiconductor laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603181A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device
JPS62205681A (en) * 1986-03-06 1987-09-10 Toshiba Corp Manufacture of embedded type semiconductor laser

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