JPS55166975A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS55166975A
JPS55166975A JP7505979A JP7505979A JPS55166975A JP S55166975 A JPS55166975 A JP S55166975A JP 7505979 A JP7505979 A JP 7505979A JP 7505979 A JP7505979 A JP 7505979A JP S55166975 A JPS55166975 A JP S55166975A
Authority
JP
Japan
Prior art keywords
resistance
type inp
clad layer
layer
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7505979A
Other languages
Japanese (ja)
Inventor
Teruo Sakurai
Haruo Kawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7505979A priority Critical patent/JPS55166975A/en
Publication of JPS55166975A publication Critical patent/JPS55166975A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To form a stripe-like current passage with high control accuracy without necessity of mask by selectively irradiating laser light to the high resistance region formed by proton implantation to reduce the resistance. CONSTITUTION:A wafer grown with an N-type InP clad layer 22, an InGaAsP active layer 23, a P-type InP clad layer 24, a P-type InGaAsP contact layer 25 on an N-type InP substrate 21. Then, proton is implanted to increase the resistance in the clad layer 24 and the contact layer 25 to form high resistance layers 24', 25'. Then, laser light is irradiated only to the stripe-like electrode forming portion 26 on the surfaces of the layers 24', 25' to reduce the resistance in the portion 26 to the low resistance region 27. Subsequently, electrodes are formed on the low resistance regions 27 and the substrate 21.
JP7505979A 1979-06-14 1979-06-14 Manufacture of semiconductor light emitting device Pending JPS55166975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7505979A JPS55166975A (en) 1979-06-14 1979-06-14 Manufacture of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7505979A JPS55166975A (en) 1979-06-14 1979-06-14 Manufacture of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS55166975A true JPS55166975A (en) 1980-12-26

Family

ID=13565246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7505979A Pending JPS55166975A (en) 1979-06-14 1979-06-14 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS55166975A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0723303A2 (en) * 1995-01-17 1996-07-24 Hewlett-Packard Company Semiconductor light-emitting device and method for manufacture thereof
JP2007142410A (en) * 2005-11-17 2007-06-07 Sharp Corp Growth method of semiconductor layer structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0723303A2 (en) * 1995-01-17 1996-07-24 Hewlett-Packard Company Semiconductor light-emitting device and method for manufacture thereof
EP0723303A3 (en) * 1995-01-17 1997-05-28 Hewlett Packard Co Semiconductor light-emitting device and method for manufacture thereof
US6258614B1 (en) 1995-01-17 2001-07-10 Lumileds Lighting, U.S., Llc Method for manufacturing a semiconductor light-emitting device
JP2007142410A (en) * 2005-11-17 2007-06-07 Sharp Corp Growth method of semiconductor layer structure

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