JPS5456385A - Wavelength variable distribution feedback type semiconductor laser device - Google Patents

Wavelength variable distribution feedback type semiconductor laser device

Info

Publication number
JPS5456385A
JPS5456385A JP12233277A JP12233277A JPS5456385A JP S5456385 A JPS5456385 A JP S5456385A JP 12233277 A JP12233277 A JP 12233277A JP 12233277 A JP12233277 A JP 12233277A JP S5456385 A JPS5456385 A JP S5456385A
Authority
JP
Japan
Prior art keywords
layer
type
region
gaas
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12233277A
Other languages
Japanese (ja)
Inventor
Hideho Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12233277A priority Critical patent/JPS5456385A/en
Publication of JPS5456385A publication Critical patent/JPS5456385A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To make the wavelength of output light continuoulsy variable by bisecting a GaAs substrate with an arc form insulation region, providing periodci undulations perpendicular to the insulation region to the active layers grown thereon, forming a semiconductor layer thereon and providing a current path in the required region.
CONSTITUTION: An arc form insulation region 20 is beforehand formed within an N type GaAs substrate 1, and an N type AlxGa1-xAs layer 2 and a GaAs or AlY Ga1-yAs (Y≤x-0.25) active layer 3 are grown over the entire surface. Next, grooves of a specified period which are radial and are perpendicualr to the region 2 are photoetched as shown by dotted lines in the active layer 3, at the pitches being smaller on the right side of the figure and larger on the left side. Thereafter a P type AlxGa1-x As layer 4 and N type GaAs layer 5 are grown on the layer 3 and a p+ type current path 6 reaching the layer 4 is formed there. Next, a p type electrode 7 on the layer 5, and N type electrodes 9, 10 on the back of the substrate 1 isolated by the region 20 are respectively mounted
COPYRIGHT: (C)1979,JPO&Japio
JP12233277A 1977-10-14 1977-10-14 Wavelength variable distribution feedback type semiconductor laser device Pending JPS5456385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12233277A JPS5456385A (en) 1977-10-14 1977-10-14 Wavelength variable distribution feedback type semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12233277A JPS5456385A (en) 1977-10-14 1977-10-14 Wavelength variable distribution feedback type semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5456385A true JPS5456385A (en) 1979-05-07

Family

ID=14833340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12233277A Pending JPS5456385A (en) 1977-10-14 1977-10-14 Wavelength variable distribution feedback type semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5456385A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6398176A (en) * 1986-10-15 1988-04-28 Hitachi Ltd Optical semiconductor device
US4833687A (en) * 1985-12-18 1989-05-23 Sony Corporation Distributed feedback semiconductor laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5174589A (en) * 1974-12-25 1976-06-28 Hitachi Ltd HANDOT AIREEZA

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5174589A (en) * 1974-12-25 1976-06-28 Hitachi Ltd HANDOT AIREEZA

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833687A (en) * 1985-12-18 1989-05-23 Sony Corporation Distributed feedback semiconductor laser
JPS6398176A (en) * 1986-10-15 1988-04-28 Hitachi Ltd Optical semiconductor device

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