JPS5456385A - Wavelength variable distribution feedback type semiconductor laser device - Google Patents
Wavelength variable distribution feedback type semiconductor laser deviceInfo
- Publication number
- JPS5456385A JPS5456385A JP12233277A JP12233277A JPS5456385A JP S5456385 A JPS5456385 A JP S5456385A JP 12233277 A JP12233277 A JP 12233277A JP 12233277 A JP12233277 A JP 12233277A JP S5456385 A JPS5456385 A JP S5456385A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- region
- gaas
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To make the wavelength of output light continuoulsy variable by bisecting a GaAs substrate with an arc form insulation region, providing periodci undulations perpendicular to the insulation region to the active layers grown thereon, forming a semiconductor layer thereon and providing a current path in the required region.
CONSTITUTION: An arc form insulation region 20 is beforehand formed within an N type GaAs substrate 1, and an N type AlxGa1-xAs layer 2 and a GaAs or AlY Ga1-yAs (Y≤x-0.25) active layer 3 are grown over the entire surface. Next, grooves of a specified period which are radial and are perpendicualr to the region 2 are photoetched as shown by dotted lines in the active layer 3, at the pitches being smaller on the right side of the figure and larger on the left side. Thereafter a P type AlxGa1-x As layer 4 and N type GaAs layer 5 are grown on the layer 3 and a p+ type current path 6 reaching the layer 4 is formed there. Next, a p type electrode 7 on the layer 5, and N type electrodes 9, 10 on the back of the substrate 1 isolated by the region 20 are respectively mounted
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12233277A JPS5456385A (en) | 1977-10-14 | 1977-10-14 | Wavelength variable distribution feedback type semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12233277A JPS5456385A (en) | 1977-10-14 | 1977-10-14 | Wavelength variable distribution feedback type semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5456385A true JPS5456385A (en) | 1979-05-07 |
Family
ID=14833340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12233277A Pending JPS5456385A (en) | 1977-10-14 | 1977-10-14 | Wavelength variable distribution feedback type semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5456385A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6398176A (en) * | 1986-10-15 | 1988-04-28 | Hitachi Ltd | Optical semiconductor device |
US4833687A (en) * | 1985-12-18 | 1989-05-23 | Sony Corporation | Distributed feedback semiconductor laser |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5174589A (en) * | 1974-12-25 | 1976-06-28 | Hitachi Ltd | HANDOT AIREEZA |
-
1977
- 1977-10-14 JP JP12233277A patent/JPS5456385A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5174589A (en) * | 1974-12-25 | 1976-06-28 | Hitachi Ltd | HANDOT AIREEZA |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833687A (en) * | 1985-12-18 | 1989-05-23 | Sony Corporation | Distributed feedback semiconductor laser |
JPS6398176A (en) * | 1986-10-15 | 1988-04-28 | Hitachi Ltd | Optical semiconductor device |
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