JPS56110288A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS56110288A
JPS56110288A JP1334680A JP1334680A JPS56110288A JP S56110288 A JPS56110288 A JP S56110288A JP 1334680 A JP1334680 A JP 1334680A JP 1334680 A JP1334680 A JP 1334680A JP S56110288 A JPS56110288 A JP S56110288A
Authority
JP
Japan
Prior art keywords
layer
groove
active layer
semiconductor layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1334680A
Other languages
Japanese (ja)
Inventor
Toshio Murotani
Etsuji Omura
Jun Ishii
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1334680A priority Critical patent/JPS56110288A/en
Publication of JPS56110288A publication Critical patent/JPS56110288A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a single traverse mode semiconductor laser element at a low threshold value current by forming an active layer having a little energy gap on the surface of a substrate provided with the first semiconductor layer and also forming the second semiconductor layer of an opposite electroconductive type as if to embed the former active layer. CONSTITUTION:An active layer having a little energy gap is formed in a groove on the surface of a substrate provided with the first semiconductor layer. At the same time, the second semiconductive layer of an opposite electroconductive type is formed as if to embed the former active layer. For instance, an active layer 2 is provided at the bottom of a V-shaped groove 1a on the surface of a semiconductor substrate 1 and a semiconductor layer 3 is also formed even on the other surface than the groove part. Next, over these layers, the second semiconductor layer 4 of an opposite electroconductive type having a large energy gap, an insulation film 5 having an opening corresponding to the groove 1a and an electrode 6 are formed. In this case, it is desirable to have a forward current limiting layer provided at the both sides of the groove. Under this constitution, it is possible to obtain a single traverse mode semiconductor laser element at low threshold value current.
JP1334680A 1980-02-05 1980-02-05 Semiconductor laser element Pending JPS56110288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1334680A JPS56110288A (en) 1980-02-05 1980-02-05 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1334680A JPS56110288A (en) 1980-02-05 1980-02-05 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS56110288A true JPS56110288A (en) 1981-09-01

Family

ID=11830542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1334680A Pending JPS56110288A (en) 1980-02-05 1980-02-05 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS56110288A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114473A (en) * 1981-12-26 1983-07-07 Fujitsu Ltd Semiconductor light emitting device
JPS58225683A (en) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp Semiconductor laser
JPS59103465U (en) * 1982-06-01 1984-07-12 ウエスタ−ン・エレクトリツク・カムパニ−，インコ−ポレ−テツド Striped waveguide TJS laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114473A (en) * 1981-12-26 1983-07-07 Fujitsu Ltd Semiconductor light emitting device
JPS59103465U (en) * 1982-06-01 1984-07-12 ウエスタ−ン・エレクトリツク・カムパニ−，インコ−ポレ−テツド Striped waveguide TJS laser
JPS58225683A (en) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp Semiconductor laser
JPS6367349B2 (en) * 1982-06-22 1988-12-26 Mitsubishi Electric Corp

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