JPS551164A - Method of fabricating semiconductor laser device - Google Patents

Abstract

PURPOSE: To provide the subject method wherein the active region is constituted such that energy gap is small in the striped inner region whereas energy gap is large at both sides encircling said inner region, whereby light sealing and heat radiating properties are improved and the device is operated at a low threshold value.

CONSTITUTION: An N⁺ type Ga_0.7Al_0.3As layer 1 is grown on an N⁺ type GaAs substrate 5 in liquid phase or by molecular line epiaxial method, and only the central part of said layer is covered with a striped mask, and a layer 22 of P type Ga_1-x Al_xAs(0.1<x<1) which is an active region is grown on the layer 1 by the molecular line epiaxial method. Thereafter, the mask is removed, and a P type GaAs layer 2 which is similarly an active region is grown only on the striped region encircled by the layer 22, and both surfaces of said layers are aligned. Upon this occasion, the concentration of the impurities is selected so as to define the energy gap of the layer 22 at room temperature to 1.55 to 2.1 eV and that of the layer 2 to 1.43 eV. Thereafter, the P⁺type Ga_0.7Al_0.3As layer 3 and P⁺ type GaAs layer for use in ohmic electrodes are laminated and covered to provide a P side electrode 6 on the whole surface of the substrate 5, and an N side electrode 7 is mounted on the rear side of the substrate.

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