JPS5591893A - Semiconductor laser having a light-guide - Google Patents
Semiconductor laser having a light-guideInfo
- Publication number
- JPS5591893A JPS5591893A JP16479478A JP16479478A JPS5591893A JP S5591893 A JPS5591893 A JP S5591893A JP 16479478 A JP16479478 A JP 16479478A JP 16479478 A JP16479478 A JP 16479478A JP S5591893 A JPS5591893 A JP S5591893A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- layer
- gaas
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To improve the gain and stabilize the transversal mode by providing a light absorption region of conduction type opposite to that of an active layer or of semi-insulating material adjacent to the heterojunction formed by the active layer and a clad layer of conduction type same as that of the active layer.
CONSTITUTION: On the parts of n-type Ga1-xAlxAs clad layer 2 formed on GaAs substrate 1 excepting stripe region 8, p-type GaAs region 3 is formed. n-Type Ga1-yAly As active layer 4 is formed on this p-type GaAs region 3 and clad layer 2 of the part of stripe region 8. Further, on top of this is formed p-type Ga1-xAlxAs clad layer 5. The thickness of p-type GaAs region 3 is about 0.2μm, and the thickness of active region 4 is 0.2μm or less. Region 3 having both functions of a current limiter and a light-guide may be made of a semi-insulating GaAs layer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16479478A JPS5591893A (en) | 1978-12-28 | 1978-12-28 | Semiconductor laser having a light-guide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16479478A JPS5591893A (en) | 1978-12-28 | 1978-12-28 | Semiconductor laser having a light-guide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5591893A true JPS5591893A (en) | 1980-07-11 |
Family
ID=15800058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16479478A Pending JPS5591893A (en) | 1978-12-28 | 1978-12-28 | Semiconductor laser having a light-guide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591893A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244691A (en) * | 1988-08-26 | 1990-09-28 | American Teleph & Telegr Co <Att> | Manufacture and etching method for photon integrated circuit |
-
1978
- 1978-12-28 JP JP16479478A patent/JPS5591893A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244691A (en) * | 1988-08-26 | 1990-09-28 | American Teleph & Telegr Co <Att> | Manufacture and etching method for photon integrated circuit |
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