JPS5591893A - Semiconductor laser having a light-guide - Google Patents

Semiconductor laser having a light-guide

Info

Publication number
JPS5591893A
JPS5591893A JP16479478A JP16479478A JPS5591893A JP S5591893 A JPS5591893 A JP S5591893A JP 16479478 A JP16479478 A JP 16479478A JP 16479478 A JP16479478 A JP 16479478A JP S5591893 A JPS5591893 A JP S5591893A
Authority
JP
Japan
Prior art keywords
region
type
layer
gaas
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16479478A
Other languages
Japanese (ja)
Inventor
Nobuyuki Takagi
Hiroshi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16479478A priority Critical patent/JPS5591893A/en
Publication of JPS5591893A publication Critical patent/JPS5591893A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To improve the gain and stabilize the transversal mode by providing a light absorption region of conduction type opposite to that of an active layer or of semi-insulating material adjacent to the heterojunction formed by the active layer and a clad layer of conduction type same as that of the active layer.
CONSTITUTION: On the parts of n-type Ga1-xAlxAs clad layer 2 formed on GaAs substrate 1 excepting stripe region 8, p-type GaAs region 3 is formed. n-Type Ga1-yAly As active layer 4 is formed on this p-type GaAs region 3 and clad layer 2 of the part of stripe region 8. Further, on top of this is formed p-type Ga1-xAlxAs clad layer 5. The thickness of p-type GaAs region 3 is about 0.2μm, and the thickness of active region 4 is 0.2μm or less. Region 3 having both functions of a current limiter and a light-guide may be made of a semi-insulating GaAs layer.
COPYRIGHT: (C)1980,JPO&Japio
JP16479478A 1978-12-28 1978-12-28 Semiconductor laser having a light-guide Pending JPS5591893A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16479478A JPS5591893A (en) 1978-12-28 1978-12-28 Semiconductor laser having a light-guide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16479478A JPS5591893A (en) 1978-12-28 1978-12-28 Semiconductor laser having a light-guide

Publications (1)

Publication Number Publication Date
JPS5591893A true JPS5591893A (en) 1980-07-11

Family

ID=15800058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16479478A Pending JPS5591893A (en) 1978-12-28 1978-12-28 Semiconductor laser having a light-guide

Country Status (1)

Country Link
JP (1) JPS5591893A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02244691A (en) * 1988-08-26 1990-09-28 American Teleph & Telegr Co <Att> Manufacture and etching method for photon integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02244691A (en) * 1988-08-26 1990-09-28 American Teleph & Telegr Co <Att> Manufacture and etching method for photon integrated circuit

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