JPS5691490A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5691490A
JPS5691490A JP16984379A JP16984379A JPS5691490A JP S5691490 A JPS5691490 A JP S5691490A JP 16984379 A JP16984379 A JP 16984379A JP 16984379 A JP16984379 A JP 16984379A JP S5691490 A JPS5691490 A JP S5691490A
Authority
JP
Japan
Prior art keywords
grown
layer
groove
type
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16984379A
Other languages
Japanese (ja)
Other versions
JPS6023517B2 (en
Inventor
Saburo Yamamoto
Morichika Yano
Yukio Kurata
Kaneki Matsui
Toshiro Hayakawa
Haruhisa Takiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16984379A priority Critical patent/JPS6023517B2/en
Publication of JPS5691490A publication Critical patent/JPS5691490A/en
Publication of JPS6023517B2 publication Critical patent/JPS6023517B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make lateral mode stable fine spot oscillation and reduce the threshold value current by forming a laser oscillation range with the central portion at the center of the 2-step type V-groove of the surface of a substrate crystal of a first clad layer grown thicker than the other portions. CONSTITUTION:A current limiting layer 16 is ipitaxially grown on the surface of a substrate crystal, and a 2-stage type V-groove 20 is provided of which the opening angle at the center there of is smaller than that at the both side portions. A double hetero-structure is formed by growing a first clad layer 13 and a second clad layer 14 of N type so that a P type active layer 12 may be sandwiched therebetween. Only the central portion where the opening angle of the groove 20 is small of the layer 13 is grown thick to form a laser oscillation range and the other portions is grown thin to form luminescence absorbing range by extremely cutting down growth duration. Thereby, lateral mode stable fine spot oscillation can be obtained.
JP16984379A 1979-12-25 1979-12-25 semiconductor laser device Expired JPS6023517B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16984379A JPS6023517B2 (en) 1979-12-25 1979-12-25 semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16984379A JPS6023517B2 (en) 1979-12-25 1979-12-25 semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS5691490A true JPS5691490A (en) 1981-07-24
JPS6023517B2 JPS6023517B2 (en) 1985-06-07

Family

ID=15893950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16984379A Expired JPS6023517B2 (en) 1979-12-25 1979-12-25 semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6023517B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6392078A (en) * 1986-10-07 1988-04-22 Sharp Corp Semiconductor laser element
JPS6393182A (en) * 1986-10-08 1988-04-23 Sharp Corp Buried semiconductor laser element
JPS6393183A (en) * 1986-10-08 1988-04-23 Sharp Corp Buried semiconductor laser element
JPH04123488A (en) * 1990-09-14 1992-04-23 Toshiba Corp Control board unit
JP2006108187A (en) * 2004-09-30 2006-04-20 Dowa Mining Co Ltd Light-emitting diode and manufacturing method therefor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6392078A (en) * 1986-10-07 1988-04-22 Sharp Corp Semiconductor laser element
JPH0553316B2 (en) * 1986-10-07 1993-08-09 Sharp Kk
JPS6393182A (en) * 1986-10-08 1988-04-23 Sharp Corp Buried semiconductor laser element
JPS6393183A (en) * 1986-10-08 1988-04-23 Sharp Corp Buried semiconductor laser element
JPH0519998B2 (en) * 1986-10-08 1993-03-18 Sharp Kk
JPH04123488A (en) * 1990-09-14 1992-04-23 Toshiba Corp Control board unit
JP2006108187A (en) * 2004-09-30 2006-04-20 Dowa Mining Co Ltd Light-emitting diode and manufacturing method therefor

Also Published As

Publication number Publication date
JPS6023517B2 (en) 1985-06-07

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