JPS57211791A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57211791A
JPS57211791A JP9871981A JP9871981A JPS57211791A JP S57211791 A JPS57211791 A JP S57211791A JP 9871981 A JP9871981 A JP 9871981A JP 9871981 A JP9871981 A JP 9871981A JP S57211791 A JPS57211791 A JP S57211791A
Authority
JP
Japan
Prior art keywords
layer
resonator
gaas
gaalas
stripe groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9871981A
Other languages
Japanese (ja)
Other versions
JPS622716B2 (en
Inventor
Kazuhisa Murata
Saburo Yamamoto
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP9871981A priority Critical patent/JPS57211791A/en
Publication of JPS57211791A publication Critical patent/JPS57211791A/en
Publication of JPS622716B2 publication Critical patent/JPS622716B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To allow a semiconductor laser element to have a higher output, by a method wherein inside a resonator a refractive difference is provided laterally, while in the vicinity of the resonator end surface, light is dispersed toward the outside. CONSTITUTION:The layer having an opposite polarity for restricting a current passage is subjected to etching in order to cut a stripe groove as that the stripe width will be small in the vicinity of resonator end surfaces 20, 21 but large inside the resonator. A crystal layer for laser oscillation is deposited on the surface having the stripe groove. The thickness of an active layer 17 or light- guide layer constituting the crystal layer is formed thick correspondingly to the stripe groove inside the resonator. On a P-GaAs substrate 14, a current-trapping layer 15 made of n-GaAs for restricting the current passage, a P type clad layer 16 made of P-GaAlAs, an active layer 17 made of P- or N-GaAlAs (or GaAs), and N type clad layer 18 made of N-GaAlAs, and an cap layer 19 made of N- GaAs are successively laminated by liquid phase epitaxial growth.
JP9871981A 1981-06-24 1981-06-24 Semiconductor laser element Granted JPS57211791A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9871981A JPS57211791A (en) 1981-06-24 1981-06-24 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9871981A JPS57211791A (en) 1981-06-24 1981-06-24 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS57211791A true JPS57211791A (en) 1982-12-25
JPS622716B2 JPS622716B2 (en) 1987-01-21

Family

ID=14227323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9871981A Granted JPS57211791A (en) 1981-06-24 1981-06-24 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57211791A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155983A (en) * 1983-02-24 1984-09-05 Sharp Corp Manufacture of semiconductor laser element
JPS59167085A (en) * 1983-03-14 1984-09-20 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS601881A (en) * 1983-06-17 1985-01-08 Sharp Corp Semiconductor laser element
US4608695A (en) * 1982-09-30 1986-08-26 Sony Corporation Laser device formed with a stripe light emission region
JPS6348887A (en) * 1986-08-19 1988-03-01 Sony Corp Semiconductor laser element
EP0291936A2 (en) * 1987-05-18 1988-11-23 Kabushiki Kaisha Toshiba Semiconductor Laser

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608695A (en) * 1982-09-30 1986-08-26 Sony Corporation Laser device formed with a stripe light emission region
JPS59155983A (en) * 1983-02-24 1984-09-05 Sharp Corp Manufacture of semiconductor laser element
JPS59167085A (en) * 1983-03-14 1984-09-20 Matsushita Electric Ind Co Ltd Semiconductor laser
JPH0416957B2 (en) * 1983-03-14 1992-03-25 Matsushita Electric Ind Co Ltd
JPS601881A (en) * 1983-06-17 1985-01-08 Sharp Corp Semiconductor laser element
JPS6348887A (en) * 1986-08-19 1988-03-01 Sony Corp Semiconductor laser element
EP0291936A2 (en) * 1987-05-18 1988-11-23 Kabushiki Kaisha Toshiba Semiconductor Laser

Also Published As

Publication number Publication date
JPS622716B2 (en) 1987-01-21

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