JPS5724590A - Manufacture of semiconductor laser device - Google Patents

Manufacture of semiconductor laser device

Info

Publication number
JPS5724590A
JPS5724590A JP10003980A JP10003980A JPS5724590A JP S5724590 A JPS5724590 A JP S5724590A JP 10003980 A JP10003980 A JP 10003980A JP 10003980 A JP10003980 A JP 10003980A JP S5724590 A JPS5724590 A JP S5724590A
Authority
JP
Japan
Prior art keywords
layer
face
resonance
cleaving
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10003980A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10003980A priority Critical patent/JPS5724590A/en
Publication of JPS5724590A publication Critical patent/JPS5724590A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a structure effective to control the transverse made of laser oscillation, by forming a high loss surface, with the part to be oscillated left, by etching, and forming a resonance surface by cleaving. CONSTITUTION:An N-Ga1-xAlxAs layer 2, an N-Ga1-yAs layer 3, a P-Ga1-xAlxAs layer 4, a P-GaAs layer 5 are epitaxially grown in order on a GaAs substrate 1. Then, an insulating film 6 of Al2O3, SiO2 or the like is formed on the P-GaAs layer 5 to obtain a P-side electrode 7 and an N-side electrode 8 respectively. In this case, a stripe 9 is for injecting electricity. Accodingly, such an easy manufacturing method wherein the resonance face is formed by cleaving and the high loss face in formed by etching can make the reflectance of the resonance face samller and obtain a stable transverse mode oscillation.
JP10003980A 1980-07-21 1980-07-21 Manufacture of semiconductor laser device Pending JPS5724590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10003980A JPS5724590A (en) 1980-07-21 1980-07-21 Manufacture of semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10003980A JPS5724590A (en) 1980-07-21 1980-07-21 Manufacture of semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5724590A true JPS5724590A (en) 1982-02-09

Family

ID=14263375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10003980A Pending JPS5724590A (en) 1980-07-21 1980-07-21 Manufacture of semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5724590A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251884A (en) * 1975-10-22 1977-04-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
JPS52105790A (en) * 1976-03-01 1977-09-05 Nec Corp Injection type semiconductor laser element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251884A (en) * 1975-10-22 1977-04-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
JPS52105790A (en) * 1976-03-01 1977-09-05 Nec Corp Injection type semiconductor laser element

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