JPS5712590A - Buried type double heterojunction laser element - Google Patents

Buried type double heterojunction laser element

Info

Publication number
JPS5712590A
JPS5712590A JP8704980A JP8704980A JPS5712590A JP S5712590 A JPS5712590 A JP S5712590A JP 8704980 A JP8704980 A JP 8704980A JP 8704980 A JP8704980 A JP 8704980A JP S5712590 A JPS5712590 A JP S5712590A
Authority
JP
Japan
Prior art keywords
clad
region
laser element
comes
clad region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8704980A
Other languages
Japanese (ja)
Other versions
JPS6318876B2 (en
Inventor
Hidenori Nomura
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8704980A priority Critical patent/JPS5712590A/en
Priority to US06/277,508 priority patent/US4429397A/en
Publication of JPS5712590A publication Critical patent/JPS5712590A/en
Publication of JPS6318876B2 publication Critical patent/JPS6318876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To contrive inhibition of a high mode oscillation and to enable to perform a stabilized oscillation of high output by a method wherein the first and the second clad regions having a different refractive index are provided on the clad region. CONSTITUTION:On the semiconductor substrate 1 having a stripe-forming mesa structure 1a, an active semiconductor layer 2 having an active region 2a, the first clad region 3, the second clad region 4, the third clad region 5 and an electrode forming layer 6 are formed by performing an epitaxial growth. Besides, an N-side and a P-side electrodes 8 and 7 are formed on the substrate 1 and the layer 6, and the buried type double heterojuncton laser element is constituted. The clad regions 3 and 4 of the laser element have a different refractive index respectively, the clad region 3 which comes in contact with the active region 2a has the thickness thinner than the width of the active region 2a at the horizontal direction section which comes in contact with the active region 2a and the refractive index of the clad region 4 which comes in contact with the clad region 3 is increased.
JP8704980A 1980-06-26 1980-06-26 Buried type double heterojunction laser element Granted JPS5712590A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8704980A JPS5712590A (en) 1980-06-26 1980-06-26 Buried type double heterojunction laser element
US06/277,508 US4429397A (en) 1980-06-26 1981-06-26 Buried heterostructure laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8704980A JPS5712590A (en) 1980-06-26 1980-06-26 Buried type double heterojunction laser element

Publications (2)

Publication Number Publication Date
JPS5712590A true JPS5712590A (en) 1982-01-22
JPS6318876B2 JPS6318876B2 (en) 1988-04-20

Family

ID=13904078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8704980A Granted JPS5712590A (en) 1980-06-26 1980-06-26 Buried type double heterojunction laser element

Country Status (1)

Country Link
JP (1) JPS5712590A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10399891B2 (en) 2016-02-15 2019-09-03 Pukyong National University Industry-University Cooperation Foundation Wavelength conversion glass, method for preparing same, and light emitting device comprising same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0267688U (en) * 1988-11-10 1990-05-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10399891B2 (en) 2016-02-15 2019-09-03 Pukyong National University Industry-University Cooperation Foundation Wavelength conversion glass, method for preparing same, and light emitting device comprising same

Also Published As

Publication number Publication date
JPS6318876B2 (en) 1988-04-20

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