JPS5666084A - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting elementInfo
- Publication number
- JPS5666084A JPS5666084A JP14249479A JP14249479A JPS5666084A JP S5666084 A JPS5666084 A JP S5666084A JP 14249479 A JP14249479 A JP 14249479A JP 14249479 A JP14249479 A JP 14249479A JP S5666084 A JPS5666084 A JP S5666084A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- section
- mesa section
- burried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain the lateral-mode-controlled laser beam for the subject element by a method wherein a mesa section, having the top layer of P type guide layer, is formed on an N type semiconductor layer and a P type layer is provided between the semiconductor layer and a burried layer and on the guide layer in the case of the light-emitting element having the construction wherein an N type burried section is provided on the mesa section. CONSTITUTION:A liquid-phase or a vapor-phase is epitaxially grown by laminating an N type InP layer 2, an undoped InGaAsP active layer 3 and a P type guide layer 4 on an N type InP substrate 1, and a mese section 11 is formed by performing a selective etching. Then this substrate 1 is placed in a growing furnace and a thin P type InGaAsP or a P type InP layer 12 is grown on the whole surface. At this time, in order not to have growth on the side of the mesa section 11, the layer 12 is covered only on the layer 2 connecting to the bottom of the mesa section, and on the surface of the layer 4. Thus the side of the mesa section 11 is burried with an N type InGaAsP or an N type InP layer 13 by providing the layer 12, an electrode 8 which covers the layers 12 and 13 is coated on the surface, and also an electrode 9 is coated on the reverse side of the substrate 1 respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14249479A JPS5666084A (en) | 1979-11-02 | 1979-11-02 | Semiconductor light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14249479A JPS5666084A (en) | 1979-11-02 | 1979-11-02 | Semiconductor light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5666084A true JPS5666084A (en) | 1981-06-04 |
Family
ID=15316626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14249479A Pending JPS5666084A (en) | 1979-11-02 | 1979-11-02 | Semiconductor light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5666084A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57206082A (en) * | 1981-06-12 | 1982-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
| JPS5954284A (en) * | 1982-09-22 | 1984-03-29 | Hitachi Ltd | Embedded type optical semiconductor device |
| JPS59210686A (en) * | 1984-04-20 | 1984-11-29 | Hitachi Ltd | Semiconductor laser device |
| JPS6144485A (en) * | 1984-08-08 | 1986-03-04 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and manufacture thereof |
| JP6987322B1 (en) * | 2021-03-05 | 2021-12-22 | 三菱電機株式会社 | Optical semiconductor devices and their manufacturing methods |
-
1979
- 1979-11-02 JP JP14249479A patent/JPS5666084A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57206082A (en) * | 1981-06-12 | 1982-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
| JPS5954284A (en) * | 1982-09-22 | 1984-03-29 | Hitachi Ltd | Embedded type optical semiconductor device |
| JPS59210686A (en) * | 1984-04-20 | 1984-11-29 | Hitachi Ltd | Semiconductor laser device |
| JPS6356715B2 (en) * | 1984-04-20 | 1988-11-09 | Hitachi Ltd | |
| JPS6144485A (en) * | 1984-08-08 | 1986-03-04 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and manufacture thereof |
| JP6987322B1 (en) * | 2021-03-05 | 2021-12-22 | 三菱電機株式会社 | Optical semiconductor devices and their manufacturing methods |
| WO2022185508A1 (en) * | 2021-03-05 | 2022-09-09 | 三菱電機株式会社 | Optical semiconductor device and method for producing same |
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