JPS6482525A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6482525A
JPS6482525A JP24180887A JP24180887A JPS6482525A JP S6482525 A JPS6482525 A JP S6482525A JP 24180887 A JP24180887 A JP 24180887A JP 24180887 A JP24180887 A JP 24180887A JP S6482525 A JPS6482525 A JP S6482525A
Authority
JP
Japan
Prior art keywords
layer
grown
trench
substrate
clad layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24180887A
Other languages
Japanese (ja)
Inventor
Toshio Tanaka
Ichiro Kume
Aiichiro Nara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP24180887A priority Critical patent/JPS6482525A/en
Publication of JPS6482525A publication Critical patent/JPS6482525A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To form a distributed index in the cross direction by forming a trench to the top face of a slightly inclined and shaped substrate and growing a crystal through a liquid growth method in a semiconductor laser device. CONSTITUTION:The top face of a substrate 9 composed of P-type GaAs is inclined at theta deg. and the substrate 9 is formed. A current block layer 2 is grown onto the substrate 9, and a V trench 7 is shaped. A clad layer 3 consisting of AlGaAs is grown through a liquid growth method, but layer thickness is thinned because the clad layer 3 is difficult to be grown in the V trench 7. When an active layer 4 made up of GaAs is grown on the clad layer 3, the active layer 4 is grown thickly in the V trench 7. A clad layer 5 and a contact layer 6 are grown. Accordingly, the surface of the growth layer is flattened, thus forming a distributed index in the cross direction to a semiconductor laser.
JP24180887A 1987-09-24 1987-09-24 Manufacture of semiconductor device Pending JPS6482525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24180887A JPS6482525A (en) 1987-09-24 1987-09-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24180887A JPS6482525A (en) 1987-09-24 1987-09-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6482525A true JPS6482525A (en) 1989-03-28

Family

ID=17079811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24180887A Pending JPS6482525A (en) 1987-09-24 1987-09-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6482525A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007088958A1 (en) * 2006-02-02 2007-08-09 Nippon Mining & Metals Co., Ltd. Substrate for growing of compound semiconductor and method of epitaxial growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007088958A1 (en) * 2006-02-02 2007-08-09 Nippon Mining & Metals Co., Ltd. Substrate for growing of compound semiconductor and method of epitaxial growth
US7745854B2 (en) 2006-02-02 2010-06-29 Nippon Mining & Metals Co., Ltd. Substrate for growing compound semiconductor and epitaxial growth method

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