JPS6482525A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6482525A JPS6482525A JP24180887A JP24180887A JPS6482525A JP S6482525 A JPS6482525 A JP S6482525A JP 24180887 A JP24180887 A JP 24180887A JP 24180887 A JP24180887 A JP 24180887A JP S6482525 A JPS6482525 A JP S6482525A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- grown
- trench
- substrate
- clad layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To form a distributed index in the cross direction by forming a trench to the top face of a slightly inclined and shaped substrate and growing a crystal through a liquid growth method in a semiconductor laser device. CONSTITUTION:The top face of a substrate 9 composed of P-type GaAs is inclined at theta deg. and the substrate 9 is formed. A current block layer 2 is grown onto the substrate 9, and a V trench 7 is shaped. A clad layer 3 consisting of AlGaAs is grown through a liquid growth method, but layer thickness is thinned because the clad layer 3 is difficult to be grown in the V trench 7. When an active layer 4 made up of GaAs is grown on the clad layer 3, the active layer 4 is grown thickly in the V trench 7. A clad layer 5 and a contact layer 6 are grown. Accordingly, the surface of the growth layer is flattened, thus forming a distributed index in the cross direction to a semiconductor laser.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24180887A JPS6482525A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24180887A JPS6482525A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6482525A true JPS6482525A (en) | 1989-03-28 |
Family
ID=17079811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24180887A Pending JPS6482525A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6482525A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007088958A1 (en) * | 2006-02-02 | 2007-08-09 | Nippon Mining & Metals Co., Ltd. | Substrate for growing of compound semiconductor and method of epitaxial growth |
-
1987
- 1987-09-24 JP JP24180887A patent/JPS6482525A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007088958A1 (en) * | 2006-02-02 | 2007-08-09 | Nippon Mining & Metals Co., Ltd. | Substrate for growing of compound semiconductor and method of epitaxial growth |
US7745854B2 (en) | 2006-02-02 | 2010-06-29 | Nippon Mining & Metals Co., Ltd. | Substrate for growing compound semiconductor and epitaxial growth method |
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