JPS6482591A - Manufacture of semiconductor laser device - Google Patents
Manufacture of semiconductor laser deviceInfo
- Publication number
- JPS6482591A JPS6482591A JP24181087A JP24181087A JPS6482591A JP S6482591 A JPS6482591 A JP S6482591A JP 24181087 A JP24181087 A JP 24181087A JP 24181087 A JP24181087 A JP 24181087A JP S6482591 A JPS6482591 A JP S6482591A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- grown
- melt
- clad layer
- clad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To eliminate the denatured surface of a second clad layer, with excellent controllability, and, at the same time, grow a guide layer and a contact layer, by a method wherein, after a very thin melt-back layer is grown on a second clad layer composed of A GaAs by MO-CVD method, growth is progressed while melt back is continued. CONSTITUTION:By using MO-CVD method, a first clad layer 2, an active layer 3, a second clad layer 4 and a current block layer 5 are grown in order, on a substrate 1. By using a stripe type etching mask 8, the current blocking layer 5 only is subjected to selective etching and a stripe type trench 5a is formed. After the etching mask 8 is eliminated, a melt back layer 9 composed of an extremely thin GaAs is grown on the whole surface by MO-CVD method. While the melt back layer 9 and a surface corresponding to the bottom of the stripe type trench 5a are subjected to melt-back by LPE method, a guide layer 6 and a contact layer 7 for ohmic contact are grown in order, and denatured parts of the second clad layer 4 are eliminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24181087A JPS6482591A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24181087A JPS6482591A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6482591A true JPS6482591A (en) | 1989-03-28 |
Family
ID=17079838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24181087A Pending JPS6482591A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6482591A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11870132B2 (en) | 2018-03-29 | 2024-01-09 | Intel Corporation | Antenna modules and communication devices |
-
1987
- 1987-09-24 JP JP24181087A patent/JPS6482591A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11870132B2 (en) | 2018-03-29 | 2024-01-09 | Intel Corporation | Antenna modules and communication devices |
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