JPS6457778A - Compound semiconductor light emitting element - Google Patents

Compound semiconductor light emitting element

Info

Publication number
JPS6457778A
JPS6457778A JP21434487A JP21434487A JPS6457778A JP S6457778 A JPS6457778 A JP S6457778A JP 21434487 A JP21434487 A JP 21434487A JP 21434487 A JP21434487 A JP 21434487A JP S6457778 A JPS6457778 A JP S6457778A
Authority
JP
Japan
Prior art keywords
layer
mesa groove
compound semiconductor
region
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21434487A
Other languages
Japanese (ja)
Inventor
Shigeyuki Misu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP21434487A priority Critical patent/JPS6457778A/en
Publication of JPS6457778A publication Critical patent/JPS6457778A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To form a grown layer by one epitaxial growth and to perform a low threshold value and a single mode oscillation by providing a current narrowing layer having a mesa groove in a semiconductor substrate, and laminating an active layer recessed corresponding to the mesa groove thereon through a clad layer. CONSTITUTION:A P-type impurity region 20a is formed in a predetermined diffusion depth on the main surface of a semiconductor substrate 20, a mesa groove 20b is opened at a predetermined part of the region 20a to form a current narrowing layer having a mesa groove 20b. The material of the substrate 20 is made of III-V or II-IV compound semiconductor. A first clad layer 21 to contact layer 24 are formed by a series of one epitaxial growth. It can prevent a regrown boundary in a plurality of epitaxial growths from damaging, a current is narrowed by the region 20a to oscillate in a single basic lateral mode.
JP21434487A 1987-08-28 1987-08-28 Compound semiconductor light emitting element Pending JPS6457778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21434487A JPS6457778A (en) 1987-08-28 1987-08-28 Compound semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21434487A JPS6457778A (en) 1987-08-28 1987-08-28 Compound semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS6457778A true JPS6457778A (en) 1989-03-06

Family

ID=16654208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21434487A Pending JPS6457778A (en) 1987-08-28 1987-08-28 Compound semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS6457778A (en)

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