JPS5775483A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5775483A
JPS5775483A JP15180280A JP15180280A JPS5775483A JP S5775483 A JPS5775483 A JP S5775483A JP 15180280 A JP15180280 A JP 15180280A JP 15180280 A JP15180280 A JP 15180280A JP S5775483 A JPS5775483 A JP S5775483A
Authority
JP
Japan
Prior art keywords
layer
type
film
etching
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15180280A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15180280A priority Critical patent/JPS5775483A/en
Publication of JPS5775483A publication Critical patent/JPS5775483A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent a decrease in oscillation efficiency by a method wherein an active layer is formed by surrounding a convex section by composing the upper part of a striped region at the layer away from an semiconductor-layer substrate formed by inserting the active layer as conve shape and implanted current is diffused to the transverse direction. CONSTITUTION:A striped SiO2 film 11 is formed on an N type InP substrate 10 and the film 11 is made as convex stripes by etching to grow a P type InGaAsP layer 12 by a liquids growth method. Next, after removing the film 11, concave stripes are formed by etching the substrate 10 and then an N type InGaAsP guide layer 13, an N type InGaAsP active layer 14, and a P type InGaAsP layer 15 are consecutively grown by the second epitaxial growth and furthermore, a P type InP layer 16 and a striped SiO2 film 11 are formed. Next, after removing the film 11, an N type InP layer 17 is grown by the third etching and a P type impurity diffusion region 18 is formed by Cd diffusion so that the region 18 may be the current input to the P side of the layer 17 and the implanted current is made to be diffused to the transverse direction.
JP15180280A 1980-10-29 1980-10-29 Semiconductor laser Pending JPS5775483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15180280A JPS5775483A (en) 1980-10-29 1980-10-29 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15180280A JPS5775483A (en) 1980-10-29 1980-10-29 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5775483A true JPS5775483A (en) 1982-05-12

Family

ID=15526613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15180280A Pending JPS5775483A (en) 1980-10-29 1980-10-29 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5775483A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0493125A2 (en) * 1990-12-27 1992-07-01 Furukawa Electric Co., Ltd. Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0493125A2 (en) * 1990-12-27 1992-07-01 Furukawa Electric Co., Ltd. Semiconductor laser device

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