JPS57198679A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPS57198679A
JPS57198679A JP8262881A JP8262881A JPS57198679A JP S57198679 A JPS57198679 A JP S57198679A JP 8262881 A JP8262881 A JP 8262881A JP 8262881 A JP8262881 A JP 8262881A JP S57198679 A JPS57198679 A JP S57198679A
Authority
JP
Japan
Prior art keywords
layer
type
confining
thick part
inclination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8262881A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8262881A priority Critical patent/JPS57198679A/en
Publication of JPS57198679A publication Critical patent/JPS57198679A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure

Abstract

PURPOSE:To deflect a light beam by providing steps at the central parts of a confining layer constituting the optical semiconductor device and also of an active layer on the confining layer, forming a stripe region which enters the confining layer on the active layer, forming a light irradiating window corresponding to the step, and changing the gain distribution of carriers from an electrode. CONSTITUTION:On an n type InP substrate 11 on which a step 11a is formed at the central part of the surface, an n type InP confining layer 12, on which inclination 12a is formed by the step 11a, is epitaxially grown. A slant InGaAsP active layer 13, which has a thick part 13a caused by the inclination 12a, is deposited on the layer 12. A p type confining layer 14 and n type InGaAsP cap layer 15 is layered and grown on the layer 13 so as to form the flat surface. Then, p type stripe region 16, which reaches a half the depth of the layer 14 and whose lower end is located in the vicinity of the thick part 13a, is diffused and fromed in the layer 15. A positive electrode 17 is deposited on the layer 15. The light irradating part 17a corresponding to the thick part 13a is provided.
JP8262881A 1981-05-30 1981-05-30 Optical semiconductor device Pending JPS57198679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8262881A JPS57198679A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8262881A JPS57198679A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPS57198679A true JPS57198679A (en) 1982-12-06

Family

ID=13779705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8262881A Pending JPS57198679A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS57198679A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601883A (en) * 1983-06-20 1985-01-08 Toshiba Corp Semiconductor laser device and manufacture thereof
JPH01165189A (en) * 1987-12-22 1989-06-29 Canon Inc Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601883A (en) * 1983-06-20 1985-01-08 Toshiba Corp Semiconductor laser device and manufacture thereof
JPH01165189A (en) * 1987-12-22 1989-06-29 Canon Inc Semiconductor laser

Similar Documents

Publication Publication Date Title
KR850008405A (en) Semiconductor photodetector and its manufacturing method
GB1570479A (en) Heterostructure laser
JPS5710285A (en) Semiconductor laser
JPS57198679A (en) Optical semiconductor device
JPS57198678A (en) Optical semiconductor device
JPS57198677A (en) Optical semiconductor device
JPS57162483A (en) Semiconductor luminous device
JPS57207388A (en) Manufacture of semiconductor laser
JPS57198676A (en) Optical semiconductor device
JPS57198675A (en) Optical semiconductor device
JPS5763882A (en) Manufacture of semiconductor laser
JPS5749290A (en) Semiconductor laser device
JPS5789285A (en) Semiconductor laser
JPS57167693A (en) Manufacture of optical semiconductor element
JPS5742184A (en) Semiconductor laser element
JPS5712587A (en) Hetero-structure semiconductor laser
JPS57139982A (en) Semiconductor laser element
JPS5643794A (en) Semiconductor laser
JPS5748286A (en) Manufacture of buried hetero structured semiconductor laser
JPS56164590A (en) Semiconductor laser
JPS5775483A (en) Semiconductor laser
JPS56146288A (en) Manufacture of semiconductor light emitting device
JPS57198681A (en) Optical semiconductor
JPS5789284A (en) Semiconductor laser
JPS57117288A (en) Semiconductor laser element