JPS5789284A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5789284A JPS5789284A JP16606180A JP16606180A JPS5789284A JP S5789284 A JPS5789284 A JP S5789284A JP 16606180 A JP16606180 A JP 16606180A JP 16606180 A JP16606180 A JP 16606180A JP S5789284 A JPS5789284 A JP S5789284A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- groove
- active layer
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain laser with a small oscillation threshold current by making reflection rate small forming carrier intensity difference in an active layer by changing Zn diffusion distance from a substrate to the active layer providing a tripe shaped groove on a GaAs substrate doped by Zn. CONSTITUTION:A groove 12 of a stripe shape, 1-2mum wide is formed on a p type substrate 1 of the carrier intensity 1X10<19>/cm<3> doped with Zn. A p type GaAlAs of 8X10<17>/cm<3> is grown to fill the groove to make the first layer 14 on a substrate 11, and an active layer 13 of the same intensity and an n type third lay 15 of 1X10<18>/cm<3> and an n type gap layer 16 of 3X10<17>/cm<3> are formed. The distance from the substrate 11 to the third layer 15 at the place without the groove is 0.3-0.5mum and 1-2mum at the place with the groove. Heat treatment diffuses the Zn in the substrate but the diffusion distance becomes different and the refraction rate of the active layer 13 becomes smaller. This makes semiconductor laser with a small oscillation threshold current and small beam spot and a stabilized horizontal mode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16606180A JPS5789284A (en) | 1980-11-25 | 1980-11-25 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16606180A JPS5789284A (en) | 1980-11-25 | 1980-11-25 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5789284A true JPS5789284A (en) | 1982-06-03 |
Family
ID=15824244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16606180A Pending JPS5789284A (en) | 1980-11-25 | 1980-11-25 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5789284A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03132486A (en) * | 1989-10-19 | 1991-06-05 | Honda Motor Co Ltd | Rear trunk structure of two-or three-wheel vehicle |
US12114418B2 (en) | 2019-12-30 | 2024-10-08 | Huawei Technologies Co., Ltd. | Electronic module and electronic device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152878A (en) * | 1978-05-23 | 1979-12-01 | Sharp Corp | Structure of semiconductor laser element and its manufacture |
-
1980
- 1980-11-25 JP JP16606180A patent/JPS5789284A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152878A (en) * | 1978-05-23 | 1979-12-01 | Sharp Corp | Structure of semiconductor laser element and its manufacture |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03132486A (en) * | 1989-10-19 | 1991-06-05 | Honda Motor Co Ltd | Rear trunk structure of two-or three-wheel vehicle |
US12114418B2 (en) | 2019-12-30 | 2024-10-08 | Huawei Technologies Co., Ltd. | Electronic module and electronic device |
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