JPS5789284A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5789284A
JPS5789284A JP16606180A JP16606180A JPS5789284A JP S5789284 A JPS5789284 A JP S5789284A JP 16606180 A JP16606180 A JP 16606180A JP 16606180 A JP16606180 A JP 16606180A JP S5789284 A JPS5789284 A JP S5789284A
Authority
JP
Japan
Prior art keywords
substrate
groove
active layer
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16606180A
Other languages
Japanese (ja)
Inventor
Kazuhisa Murata
Saburo Yamamoto
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16606180A priority Critical patent/JPS5789284A/en
Publication of JPS5789284A publication Critical patent/JPS5789284A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain laser with a small oscillation threshold current by making reflection rate small forming carrier intensity difference in an active layer by changing Zn diffusion distance from a substrate to the active layer providing a tripe shaped groove on a GaAs substrate doped by Zn. CONSTITUTION:A groove 12 of a stripe shape, 1-2mum wide is formed on a p type substrate 1 of the carrier intensity 1X10<19>/cm<3> doped with Zn. A p type GaAlAs of 8X10<17>/cm<3> is grown to fill the groove to make the first layer 14 on a substrate 11, and an active layer 13 of the same intensity and an n type third lay 15 of 1X10<18>/cm<3> and an n type gap layer 16 of 3X10<17>/cm<3> are formed. The distance from the substrate 11 to the third layer 15 at the place without the groove is 0.3-0.5mum and 1-2mum at the place with the groove. Heat treatment diffuses the Zn in the substrate but the diffusion distance becomes different and the refraction rate of the active layer 13 becomes smaller. This makes semiconductor laser with a small oscillation threshold current and small beam spot and a stabilized horizontal mode.
JP16606180A 1980-11-25 1980-11-25 Semiconductor laser Pending JPS5789284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16606180A JPS5789284A (en) 1980-11-25 1980-11-25 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16606180A JPS5789284A (en) 1980-11-25 1980-11-25 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5789284A true JPS5789284A (en) 1982-06-03

Family

ID=15824244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16606180A Pending JPS5789284A (en) 1980-11-25 1980-11-25 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5789284A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03132486A (en) * 1989-10-19 1991-06-05 Honda Motor Co Ltd Rear trunk structure of two-or three-wheel vehicle
US12114418B2 (en) 2019-12-30 2024-10-08 Huawei Technologies Co., Ltd. Electronic module and electronic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152878A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152878A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03132486A (en) * 1989-10-19 1991-06-05 Honda Motor Co Ltd Rear trunk structure of two-or three-wheel vehicle
US12114418B2 (en) 2019-12-30 2024-10-08 Huawei Technologies Co., Ltd. Electronic module and electronic device

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