JPS57159084A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57159084A
JPS57159084A JP4477681A JP4477681A JPS57159084A JP S57159084 A JPS57159084 A JP S57159084A JP 4477681 A JP4477681 A JP 4477681A JP 4477681 A JP4477681 A JP 4477681A JP S57159084 A JPS57159084 A JP S57159084A
Authority
JP
Japan
Prior art keywords
type
doped
layer
stripe
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4477681A
Other languages
Japanese (ja)
Other versions
JPS6258557B2 (en
Inventor
Saburo Yamamoto
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4477681A priority Critical patent/JPS57159084A/en
Publication of JPS57159084A publication Critical patent/JPS57159084A/en
Publication of JPS6258557B2 publication Critical patent/JPS6258557B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Abstract

PURPOSE:To perform a laser oscillation by a low driving current by a method wherein an inner stripe construction, in which an N type active layer, having the prescribed carrier density or above and the film thickness formed in proportion to the length of the hole diffusion based on the non-generation recombination of minor carrier, is provided on a substrate. CONSTITUTION:An N type GaAs current blocking layer, having the carrier density of 3X10<18>cm<-3> or above, is provided on a P type GaAs substrate 5 in the thickness of 0.6mum, and a stripe-shape groove 7 of 5mum in width is provided on the current blocking layer. On this groove 7, a Zn-doped P type first clad layer 1, an Si-doped N type active layer 2, a Te-doped N type second clad layer 3, and a Te-doped N type cap layer 4 are successively deposited. A P-side electrode 9 and an N-side electrode 8 are formed for use as an inner stripe semiconductor laser element. Accordingly, a spot type laser oscillation can be performed by applying a driving current of a low threshold value by the help of the stripe construction to be used for current strangulation located in the vicinity of the active layer.
JP4477681A 1981-03-25 1981-03-25 Semiconductor laser element Granted JPS57159084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4477681A JPS57159084A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4477681A JPS57159084A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61314271A Division JPS62162387A (en) 1986-12-26 1986-12-26 Crystal growing substrate for semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS57159084A true JPS57159084A (en) 1982-10-01
JPS6258557B2 JPS6258557B2 (en) 1987-12-07

Family

ID=12700813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4477681A Granted JPS57159084A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57159084A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990979A (en) * 1982-11-16 1984-05-25 Nec Corp Semiconductor laser
EP0124051A2 (en) * 1983-04-27 1984-11-07 Kabushiki Kaisha Toshiba Semiconductor laser
JPS62162387A (en) * 1986-12-26 1987-07-18 Sharp Corp Crystal growing substrate for semiconductor laser element
JPS62182570U (en) * 1986-05-09 1987-11-19
US5408488A (en) * 1993-07-09 1995-04-18 Kabushiki Kaisha Toshiba Semiconductor laser device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201800863D0 (en) 2018-01-19 2018-03-07 Ocado Innovation Ltd A grasping affordance for use in a robot system
US11745337B2 (en) 2019-08-29 2023-09-05 Kabushiki Kaisha Toshiba Handling device, control device, and computer program product

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5156188A (en) * 1974-11-13 1976-05-17 Hitachi Ltd HANDOT AIREEZA SOCHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5156188A (en) * 1974-11-13 1976-05-17 Hitachi Ltd HANDOT AIREEZA SOCHI

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990979A (en) * 1982-11-16 1984-05-25 Nec Corp Semiconductor laser
EP0124051A2 (en) * 1983-04-27 1984-11-07 Kabushiki Kaisha Toshiba Semiconductor laser
JPS62182570U (en) * 1986-05-09 1987-11-19
JPS62162387A (en) * 1986-12-26 1987-07-18 Sharp Corp Crystal growing substrate for semiconductor laser element
JPH048957B2 (en) * 1986-12-26 1992-02-18
US5408488A (en) * 1993-07-09 1995-04-18 Kabushiki Kaisha Toshiba Semiconductor laser device

Also Published As

Publication number Publication date
JPS6258557B2 (en) 1987-12-07

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