JPS6490578A - Manufacture of semiconductor laser device - Google Patents

Abstract

PURPOSE:To prevent the decomposition of a group V element in both positions of the bottom of a grooved opening section and the surface of a current block layer by equalizing the group V element as a crystal material exposed from the surface of a wafer both in the bottom of the opening section and the surface of the current block layer. CONSTITUTION:When positive voltage is applied to a P side electrode 9 and negative one to an N side electrode 10, currents flow through a second clad layer 5, an active layer 4, a first clad layer 3, a buffer layer 2 and a semiconductor substrate 1 composed of a III-V compound through a contact layer 8 and a grooved opening section 60 in a current block layer 7. Holes from the semiconductor second clad layer 5 composed of a multicomponent compound having forbidden band width larger than the layer 4 and a refractive index smaller than the layer 4 and electrons from the multicomponent compound semiconductor first clad layer 3 are injected respectively to the multicomponent compound semiconductor active layer 4 having forbidden band width smaller than the layer 3 and a refractive index larger than the layer 3, and emission by the recombination of electrons and holes is generated. Accordingly, stimulated emission starts by sufficiently increasing a current level and reaches to laser oscillation, but no As and P is decomposed in the current block layer 7 and the grooved opening section 60 as a current path in the semiconductor laser device, thus acquiring a stable current constriction effect and excellent laser characteristics.