JPS6490578A - Manufacture of semiconductor laser device - Google Patents

Manufacture of semiconductor laser device

Info

Publication number
JPS6490578A
JPS6490578A JP24843987A JP24843987A JPS6490578A JP S6490578 A JPS6490578 A JP S6490578A JP 24843987 A JP24843987 A JP 24843987A JP 24843987 A JP24843987 A JP 24843987A JP S6490578 A JPS6490578 A JP S6490578A
Authority
JP
Japan
Prior art keywords
layer
opening section
current block
semiconductor
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24843987A
Other languages
Japanese (ja)
Inventor
Tomoko Kadowaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP24843987A priority Critical patent/JPS6490578A/en
Publication of JPS6490578A publication Critical patent/JPS6490578A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the decomposition of a group V element in both positions of the bottom of a grooved opening section and the surface of a current block layer by equalizing the group V element as a crystal material exposed from the surface of a wafer both in the bottom of the opening section and the surface of the current block layer. CONSTITUTION:When positive voltage is applied to a P side electrode 9 and negative one to an N side electrode 10, currents flow through a second clad layer 5, an active layer 4, a first clad layer 3, a buffer layer 2 and a semiconductor substrate 1 composed of a III-V compound through a contact layer 8 and a grooved opening section 60 in a current block layer 7. Holes from the semiconductor second clad layer 5 composed of a multicomponent compound having forbidden band width larger than the layer 4 and a refractive index smaller than the layer 4 and electrons from the multicomponent compound semiconductor first clad layer 3 are injected respectively to the multicomponent compound semiconductor active layer 4 having forbidden band width smaller than the layer 3 and a refractive index larger than the layer 3, and emission by the recombination of electrons and holes is generated. Accordingly, stimulated emission starts by sufficiently increasing a current level and reaches to laser oscillation, but no As and P is decomposed in the current block layer 7 and the grooved opening section 60 as a current path in the semiconductor laser device, thus acquiring a stable current constriction effect and excellent laser characteristics.
JP24843987A 1987-10-01 1987-10-01 Manufacture of semiconductor laser device Pending JPS6490578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24843987A JPS6490578A (en) 1987-10-01 1987-10-01 Manufacture of semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24843987A JPS6490578A (en) 1987-10-01 1987-10-01 Manufacture of semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6490578A true JPS6490578A (en) 1989-04-07

Family

ID=17178143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24843987A Pending JPS6490578A (en) 1987-10-01 1987-10-01 Manufacture of semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6490578A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4029573A1 (en) * 1989-09-19 1991-07-04 Aisin Seiki Motor vehicle steering gear - has shaft mounted in bearing fixed to vehicle structure and connected to telescopic bush
JPH03161987A (en) * 1989-11-20 1991-07-11 Sanyo Electric Co Ltd Semiconductor laser device
JPH04286176A (en) * 1991-03-14 1992-10-12 Matsushita Electric Ind Co Ltd Forming method of semiconductor multilayer film and manufacture of semiconductor laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273687A (en) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp Semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273687A (en) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp Semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4029573A1 (en) * 1989-09-19 1991-07-04 Aisin Seiki Motor vehicle steering gear - has shaft mounted in bearing fixed to vehicle structure and connected to telescopic bush
JPH03161987A (en) * 1989-11-20 1991-07-11 Sanyo Electric Co Ltd Semiconductor laser device
JPH04286176A (en) * 1991-03-14 1992-10-12 Matsushita Electric Ind Co Ltd Forming method of semiconductor multilayer film and manufacture of semiconductor laser

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