JPS57139981A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS57139981A
JPS57139981A JP2552981A JP2552981A JPS57139981A JP S57139981 A JPS57139981 A JP S57139981A JP 2552981 A JP2552981 A JP 2552981A JP 2552981 A JP2552981 A JP 2552981A JP S57139981 A JPS57139981 A JP S57139981A
Authority
JP
Japan
Prior art keywords
carrier
injected
layer
type inp
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2552981A
Other languages
Japanese (ja)
Inventor
Hitoshi Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2552981A priority Critical patent/JPS57139981A/en
Publication of JPS57139981A publication Critical patent/JPS57139981A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/026—Optical bistable devices based on laser effects

Abstract

PURPOSE:To obtain a bistable condition in which two light output conditions exist referring to a injecting current value near a threshold value by a method wherein carrier injected areas and carrier not-injected areas are provided on a current path of striped semiconductor laser. CONSTITUTION:On an N type InP substrate 1 an N type InP clad layer 2, an InGaAsP active layer 3, a P type InP clad layer 4 and a P type InGaAsP cap layer 5 are sequentially laminated, and in addition to providing an Au-Zn electrode 8 on the layer 5 with an intermediary of an insulating film 7 such as SiO2 or the like which has openings having a striped and periodical structure, on the back plane an Au-Ge-Ni electrode 9 is provided and carrier injected areas l11- l14 and carrier not-injected areas l21-l23are formed. Thereby when a D.C. current near a threshold value is injected, a bistable condition in which two light output conditions exist in a current value is obtained depending on a hysteresis, and it is used as a light memory and a light switch.
JP2552981A 1981-02-25 1981-02-25 Semiconductor light emitting device Pending JPS57139981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2552981A JPS57139981A (en) 1981-02-25 1981-02-25 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2552981A JPS57139981A (en) 1981-02-25 1981-02-25 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS57139981A true JPS57139981A (en) 1982-08-30

Family

ID=12168562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2552981A Pending JPS57139981A (en) 1981-02-25 1981-02-25 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS57139981A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7256856B2 (en) 2000-06-13 2007-08-14 Seiko Epson Corporation Electro-optical device, method for manufacturing electro-optical device, light guide, liquid crystal device, method for manufacturing liquid crystal device, and electronic equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868188A (en) * 1971-12-20 1973-09-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868188A (en) * 1971-12-20 1973-09-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7256856B2 (en) 2000-06-13 2007-08-14 Seiko Epson Corporation Electro-optical device, method for manufacturing electro-optical device, light guide, liquid crystal device, method for manufacturing liquid crystal device, and electronic equipment

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