JPS5763880A - Lateral distribution feedback type semiconductor laser - Google Patents

Lateral distribution feedback type semiconductor laser

Info

Publication number
JPS5763880A
JPS5763880A JP55139168A JP13916880A JPS5763880A JP S5763880 A JPS5763880 A JP S5763880A JP 55139168 A JP55139168 A JP 55139168A JP 13916880 A JP13916880 A JP 13916880A JP S5763880 A JPS5763880 A JP S5763880A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor laser
type semiconductor
photowaveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55139168A
Other languages
Japanese (ja)
Inventor
Ikuo Suemune
Masamichi Yamanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP55139168A priority Critical patent/JPS5763880A/en
Publication of JPS5763880A publication Critical patent/JPS5763880A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To stabilize oscillation behavior and ouput beam at the same time, by changing effective plural elements refractive index of a photowaveguide layer, which is provided on an active layer, periodically in the direction parrallel with a laser end surface. CONSTITUTION:On an N type GaAs substrate 16, an N type GaAlAs layer 14, an N type GaAs active layer 11 and a P type Ga0.9Al0.1As layer 12 are laminated in turn, and after effective plural elements refractive index is changed periodically by providing periodic convexity and concavity on this P type photowaveguide layer 12 in the direction parallel with a laser end surface, a P type CaAlAs clad layer 13 and a P type GaAs layer 15 (P type diffusion layer 19) are formed in turn on this layer, so that electrodes 17 and 18 are provided. It is possible, by doing so, to stabilize oscillation behavior and also to form a semiconductor laser of a large output having a stabilized output beam.
JP55139168A 1980-10-04 1980-10-04 Lateral distribution feedback type semiconductor laser Pending JPS5763880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55139168A JPS5763880A (en) 1980-10-04 1980-10-04 Lateral distribution feedback type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55139168A JPS5763880A (en) 1980-10-04 1980-10-04 Lateral distribution feedback type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5763880A true JPS5763880A (en) 1982-04-17

Family

ID=15239156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55139168A Pending JPS5763880A (en) 1980-10-04 1980-10-04 Lateral distribution feedback type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5763880A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178134A2 (en) * 1984-10-09 1986-04-16 Fujitsu Limited Semiconductor laser
JP2011258855A (en) * 2010-06-11 2011-12-22 Seiko Epson Corp Light-emitting device and projector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178134A2 (en) * 1984-10-09 1986-04-16 Fujitsu Limited Semiconductor laser
US4726031A (en) * 1984-10-09 1988-02-16 Fujitsu Limited Semiconductor laser
JP2011258855A (en) * 2010-06-11 2011-12-22 Seiko Epson Corp Light-emitting device and projector

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