JPS5763885A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5763885A
JPS5763885A JP14016080A JP14016080A JPS5763885A JP S5763885 A JPS5763885 A JP S5763885A JP 14016080 A JP14016080 A JP 14016080A JP 14016080 A JP14016080 A JP 14016080A JP S5763885 A JPS5763885 A JP S5763885A
Authority
JP
Japan
Prior art keywords
layer
type
type inp
semiconductor laser
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14016080A
Other languages
Japanese (ja)
Inventor
Hirobumi Namisaki
Toshio Murotani
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14016080A priority Critical patent/JPS5763885A/en
Publication of JPS5763885A publication Critical patent/JPS5763885A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser which makes basic mode oscillation at a low threshold value, by providing a reverse current type layer, which has a step-like section, as a current-narrowing layer of a semiconductor laser having an active layer of lens-like section. CONSTITUTION:A P type InP layer 30, which has an opening in the middle, and a P type InP layer 4, which has a larger opening, are provided on an N type InP substrate 20, and then, an N type InP clad layer 2, a P type InGaAsP layer 1, a P type InP clad layer 3 and a P type In GaAsP gap layer 5 are laminated in turn, and finally, electrodes 10 and 11 are formed. As current distribution has a peak on the center by doing so, basic mode oscillation becomes strongly excited.
JP14016080A 1980-10-06 1980-10-06 Semiconductor laser device Pending JPS5763885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14016080A JPS5763885A (en) 1980-10-06 1980-10-06 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14016080A JPS5763885A (en) 1980-10-06 1980-10-06 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5763885A true JPS5763885A (en) 1982-04-17

Family

ID=15262262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14016080A Pending JPS5763885A (en) 1980-10-06 1980-10-06 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5763885A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184582A (en) * 1983-04-01 1984-10-19 Matsushita Electric Ind Co Ltd Semiconductor laser
EP0156365A2 (en) * 1984-03-28 1985-10-02 Kabushiki Kaisha Toshiba Semiconductor laser
EP0162569A2 (en) * 1984-04-17 1985-11-27 Sharp Kabushiki Kaisha A semiconductor laser
JPS60245189A (en) * 1984-05-18 1985-12-04 Sharp Corp Semiconductor laser element
JPS61287290A (en) * 1985-06-14 1986-12-17 Sharp Corp Semiconductor laser element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184582A (en) * 1983-04-01 1984-10-19 Matsushita Electric Ind Co Ltd Semiconductor laser
EP0156365A2 (en) * 1984-03-28 1985-10-02 Kabushiki Kaisha Toshiba Semiconductor laser
JPS60202975A (en) * 1984-03-28 1985-10-14 Toshiba Corp Semiconductor laser
EP0162569A2 (en) * 1984-04-17 1985-11-27 Sharp Kabushiki Kaisha A semiconductor laser
JPS60245189A (en) * 1984-05-18 1985-12-04 Sharp Corp Semiconductor laser element
JPS61287290A (en) * 1985-06-14 1986-12-17 Sharp Corp Semiconductor laser element

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