JPS5732692A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5732692A
JPS5732692A JP10868480A JP10868480A JPS5732692A JP S5732692 A JPS5732692 A JP S5732692A JP 10868480 A JP10868480 A JP 10868480A JP 10868480 A JP10868480 A JP 10868480A JP S5732692 A JPS5732692 A JP S5732692A
Authority
JP
Japan
Prior art keywords
type inp
region
gap
semiconductor laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10868480A
Other languages
Japanese (ja)
Inventor
Hisao Kumabe
Hirobumi Namisaki
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10868480A priority Critical patent/JPS5732692A/en
Publication of JPS5732692A publication Critical patent/JPS5732692A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a laser which can operate with a low threshold current by forming directly an electrode having a gap corresponding to a gap of a P type InP region on a P<+> type InP region having higher density than the P type InP layer. CONSTITUTION:A P<+> type InP region 9 is formed in a P type InP layer 4, the contacting resistance of an electrode 1 is reduced to flow a current directly under the part of a gap 1', a P type InP region 8 is formed in an N type InP substrate 7 so as not to extend the current flowing through an active layer 5. Thus, the threshold current can be reduced.
JP10868480A 1980-08-06 1980-08-06 Semiconductor laser device Pending JPS5732692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10868480A JPS5732692A (en) 1980-08-06 1980-08-06 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10868480A JPS5732692A (en) 1980-08-06 1980-08-06 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5732692A true JPS5732692A (en) 1982-02-22

Family

ID=14491034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10868480A Pending JPS5732692A (en) 1980-08-06 1980-08-06 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5732692A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63195769U (en) * 1988-06-15 1988-12-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63195769U (en) * 1988-06-15 1988-12-16

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