JPS5772389A - Constant-voltage diode - Google Patents
Constant-voltage diodeInfo
- Publication number
- JPS5772389A JPS5772389A JP14838980A JP14838980A JPS5772389A JP S5772389 A JPS5772389 A JP S5772389A JP 14838980 A JP14838980 A JP 14838980A JP 14838980 A JP14838980 A JP 14838980A JP S5772389 A JPS5772389 A JP S5772389A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- 2alpha
- constant
- voltage
- 2epsilon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000008188 pellet Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the constant-voltage diode having excellent constant-voltage characteristics by utilizing a fact that the characteristics in the forward direction of the diode indicate constant-voltage characteristics the same as Zener characteristics in a current region of 50-500mA/mm.<2>. CONSTITUTION:A semiconductor pellet 2 consists of an N type conductive region 2alpha at the center, P type conductive regions 2beta, 2gamma at the central sections of both main surfaces and N type conductive regions 2delta, 2epsilon having high impurity concentration at the side sections of both main surfaces, and the regions 2delta, 2epsilon are formed for ohmic contacts and one parts of the region 2alpha. Here, when voltage is applied between electrodes 5, currents flow through only passages through PN junctions J1 or J2, the passages of the regions 2beta-2alpha-2epsilon or the regions 2gamma-2alpha-2delta, and the semiconductor pellet 2 indicates the same voltage characteristics as the Zener characteristics when the currents in the forward direction are within the range of 50-500mA/ mm.<2>.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14838980A JPS5772389A (en) | 1980-10-24 | 1980-10-24 | Constant-voltage diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14838980A JPS5772389A (en) | 1980-10-24 | 1980-10-24 | Constant-voltage diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5772389A true JPS5772389A (en) | 1982-05-06 |
Family
ID=15451673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14838980A Pending JPS5772389A (en) | 1980-10-24 | 1980-10-24 | Constant-voltage diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5772389A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2608320A1 (en) * | 1986-12-16 | 1988-06-17 | Thomson Semiconducteurs | DEVICE FOR PROTECTING AGAINST LOW CAPACITY OVERVOLTAGES |
JP2013093574A (en) * | 2011-10-26 | 2013-05-16 | General Electric Co <Ge> | Method and system for transient voltage suppressor |
CN108598181A (en) * | 2018-05-20 | 2018-09-28 | 苏州固特斯电子科技有限公司 | A kind of general voltage-stabilizing diode structure |
-
1980
- 1980-10-24 JP JP14838980A patent/JPS5772389A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2608320A1 (en) * | 1986-12-16 | 1988-06-17 | Thomson Semiconducteurs | DEVICE FOR PROTECTING AGAINST LOW CAPACITY OVERVOLTAGES |
EP0272184A1 (en) * | 1986-12-16 | 1988-06-22 | Sgs-Thomson Microelectronics S.A. | Low-capacity overvoltage protection device |
JP2013093574A (en) * | 2011-10-26 | 2013-05-16 | General Electric Co <Ge> | Method and system for transient voltage suppressor |
CN108598181A (en) * | 2018-05-20 | 2018-09-28 | 苏州固特斯电子科技有限公司 | A kind of general voltage-stabilizing diode structure |
CN108598181B (en) * | 2018-05-20 | 2021-04-02 | 苏州固特斯电子科技有限公司 | Universal voltage-stabilizing diode structure |
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