JPS57166075A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57166075A
JPS57166075A JP5280781A JP5280781A JPS57166075A JP S57166075 A JPS57166075 A JP S57166075A JP 5280781 A JP5280781 A JP 5280781A JP 5280781 A JP5280781 A JP 5280781A JP S57166075 A JPS57166075 A JP S57166075A
Authority
JP
Japan
Prior art keywords
main
electrode
gate
voltage
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5280781A
Other languages
Japanese (ja)
Other versions
JPH0355986B2 (en
Inventor
Akio Mimura
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5280781A priority Critical patent/JPS57166075A/en
Publication of JPS57166075A publication Critical patent/JPS57166075A/en
Publication of JPH0355986B2 publication Critical patent/JPH0355986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve the manufacturing yield by a method wherein, when the static induction type semiconductor device is manufactured by means of jointly providing the multiple unit elements in one semiconductor base with the main electrodes of one side mutually separated, the gate bias voltage, the design withstand voltage of the P-N junction and the withstand voltage between the gate electrodes are specified. CONSTITUTION:The static induction type semiconductor diode is manufactured by means of jointly providing the multiple unit elements in one semiconductor base with the main electrodes of one side such as a cathode electrode mutually separated. At this time, the main electrodes of the other side are commonly connected excluding the main electrode of one side unit element with the VGK value meeting the requirements of the expression, i.e. VGK1<=VGK<VGK2, where VGK1 is the absolute values of the gate bias electrode impressed between the gate electrode required to block the voltage between a pair of main electrodes and the main electrode of one side when the main voltage in the direction of the rating orde is impressed between a pair of main electrodes of the element unit constitution while VGK2 is the design withstand voltage of the P-N junction between the main electrode region of one side and the gate region and VGK is the actual withstand voltage between the main electrode of one side and the gate electrode.
JP5280781A 1981-04-07 1981-04-07 Semiconductor device Granted JPS57166075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5280781A JPS57166075A (en) 1981-04-07 1981-04-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5280781A JPS57166075A (en) 1981-04-07 1981-04-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57166075A true JPS57166075A (en) 1982-10-13
JPH0355986B2 JPH0355986B2 (en) 1991-08-27

Family

ID=12925110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5280781A Granted JPS57166075A (en) 1981-04-07 1981-04-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57166075A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002063696A1 (en) * 2001-02-06 2002-08-15 The Kansai Electric Power Co., Inc. Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583262A (en) * 1978-12-20 1980-06-23 Hitachi Ltd Semiconductor device
JPS562667A (en) * 1979-06-20 1981-01-12 Hitachi Ltd Semiconductor device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583262A (en) * 1978-12-20 1980-06-23 Hitachi Ltd Semiconductor device
JPS562667A (en) * 1979-06-20 1981-01-12 Hitachi Ltd Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002063696A1 (en) * 2001-02-06 2002-08-15 The Kansai Electric Power Co., Inc. Semiconductor device

Also Published As

Publication number Publication date
JPH0355986B2 (en) 1991-08-27

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