JPS562667A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS562667A
JPS562667A JP7683479A JP7683479A JPS562667A JP S562667 A JPS562667 A JP S562667A JP 7683479 A JP7683479 A JP 7683479A JP 7683479 A JP7683479 A JP 7683479A JP S562667 A JPS562667 A JP S562667A
Authority
JP
Japan
Prior art keywords
region
type
gate
cathode
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7683479A
Other languages
Japanese (ja)
Other versions
JPS6145395B2 (en
Inventor
Susumu Murakami
Yoshio Terasawa
Saburo Oikawa
Tsutomu Yao
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7683479A priority Critical patent/JPS562667A/en
Publication of JPS562667A publication Critical patent/JPS562667A/en
Publication of JPS6145395B2 publication Critical patent/JPS6145395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate

Abstract

PURPOSE:To increase the withstand voltage of an FET having a gate region buried in the base region of a semiconductor substrate by providing a groove extending from the surface of the substrate to the gate region, by installing a gate electrode at the bottom of the said groove and by having a p-n junction coupled on the side of the groove. CONSTITUTION:An Si substrate 100 is consisted of p<+>-type anode region 111 and n<->-type base region 112 and a plurality of p<+>-type buried gate regions 113 are formed on the surface layer of the region 112 by diffusing. Then, after an n-type layer 116, which will be turned into a cathode region, has been grown on the whole surface of the said region 113, an etching is given leaving the layer 116 only on the area extending from the point between the region 113 to the surface of the end section of the mutually adjoining region 113, and the region 113 is then turned to a bevel type. Then, an n<+>-type cathode region 115 is formed by diffusion, the terminal of a p-n junction of the regions 116 and 115 is exposed to the side of the bevel and a p<+>-type buried gate region 114 is provided on the region 113. On this region 113 a gate electrode 300 is installed and on the region 115 a cathode electrode 400 is installed. Also an anode electrode 200 is installed on the back of the region 111.
JP7683479A 1979-06-20 1979-06-20 Semiconductor device and manufacture thereof Granted JPS562667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7683479A JPS562667A (en) 1979-06-20 1979-06-20 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7683479A JPS562667A (en) 1979-06-20 1979-06-20 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS562667A true JPS562667A (en) 1981-01-12
JPS6145395B2 JPS6145395B2 (en) 1986-10-07

Family

ID=13616699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7683479A Granted JPS562667A (en) 1979-06-20 1979-06-20 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS562667A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166075A (en) * 1981-04-07 1982-10-13 Hitachi Ltd Semiconductor device
JPS62117370A (en) * 1985-11-15 1987-05-28 Semiconductor Res Found Manufacture of double-gate electrostatic induction thyristor
JPS634680A (en) * 1986-06-24 1988-01-09 Matsushita Electric Works Ltd Electrostatic induction type semiconductor device
US5825092A (en) * 1996-05-20 1998-10-20 Harris Corporation Integrated circuit with an air bridge having a lid

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5399879A (en) * 1977-02-14 1978-08-31 Hitachi Ltd Junction-type field effect thyristor
JPS53137675A (en) * 1977-05-07 1978-12-01 Mitsubishi Electric Corp Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5399879A (en) * 1977-02-14 1978-08-31 Hitachi Ltd Junction-type field effect thyristor
JPS53137675A (en) * 1977-05-07 1978-12-01 Mitsubishi Electric Corp Manufacture for semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166075A (en) * 1981-04-07 1982-10-13 Hitachi Ltd Semiconductor device
JPH0355986B2 (en) * 1981-04-07 1991-08-27
JPS62117370A (en) * 1985-11-15 1987-05-28 Semiconductor Res Found Manufacture of double-gate electrostatic induction thyristor
JPH0257348B2 (en) * 1985-11-15 1990-12-04 Handotai Kenkyu Shinkokai
JPS634680A (en) * 1986-06-24 1988-01-09 Matsushita Electric Works Ltd Electrostatic induction type semiconductor device
US5825092A (en) * 1996-05-20 1998-10-20 Harris Corporation Integrated circuit with an air bridge having a lid

Also Published As

Publication number Publication date
JPS6145395B2 (en) 1986-10-07

Similar Documents

Publication Publication Date Title
JPS54157092A (en) Semiconductor integrated circuit device
JPS5522840A (en) Semiconductor switching element and manufacturing method thereof
JPS6489365A (en) Semiconductor device
JPS562667A (en) Semiconductor device and manufacture thereof
KR970054357A (en) Semiconductor device and manufacturing method
JPS55102267A (en) Semiconductor control element
JPS5473585A (en) Gate turn-off thyristor
JPS54113273A (en) Field effect-type switching element
JPS54112182A (en) Semiconductor device
JPS5778171A (en) Thyristor
JPS57166078A (en) Semiconductor device
JPS5539667A (en) Turn off thyristor
JPS55166965A (en) Junction type fet
JPS55162263A (en) Semiconductor device
JPS56135965A (en) Semiconductor device
JPS56108263A (en) Manufacture of semiconductor device
JPS5529175A (en) Planar type transistor
JPS5648167A (en) Semiconductor device
JPS564275A (en) Semiconductor device
JPS5617064A (en) Transistor
JPS54120588A (en) Gate turn-off thyristor
JPS5658258A (en) Semiconductor integrated circuit
JPS54146979A (en) Semiconductor switching element
JPS5612779A (en) Zener diode
JPS5563879A (en) Semiconductor device