JPS564275A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS564275A
JPS564275A JP8000579A JP8000579A JPS564275A JP S564275 A JPS564275 A JP S564275A JP 8000579 A JP8000579 A JP 8000579A JP 8000579 A JP8000579 A JP 8000579A JP S564275 A JPS564275 A JP S564275A
Authority
JP
Japan
Prior art keywords
region
substrate
type
perforated
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8000579A
Other languages
Japanese (ja)
Inventor
Kiyoyuki Tsurumiya
Tetsuo Sano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8000579A priority Critical patent/JPS564275A/en
Publication of JPS564275A publication Critical patent/JPS564275A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the forward and reverse characteristics of a semiconductor device by diffusing a base region on the surface layer of a semiconductor substrate becoming a collector, forming a plurality of grooves directing the base region on the back surface of the substrate and forming a diffused layer of the same conducting type as the substrate and high impurity density therein. CONSTITUTION:A P-type base region 2 is diffused on the surface layer of an N- type semiconductor substrate 1 becoming a collector region, a groove 7 perforated in the substrate 1 surrounding the region 2 is perforated thereon, an N<+>-type region 8 is diffused from the side wall to the bottom surface, and the P-N junction surface formed with the substrate 1 and the region 2 is increased. Then, the N-type emitter region 3 is formed in the region 2, a surface protective oxide film 4 is coated on the entire surface, openings are perforated thereat, base and emitter electrodes 10 and 11 are mounted on the respective regions to form a bi-directional transistor. In this configuration grooves 5 which do not reach the region 2 but directs the region 2 are perforated on the back surface of the substrate 1, an N<+>-type layer 6 is diffused on the back surface including the grooves 5, and a collector electrode 9 is coated thereon.
JP8000579A 1979-06-25 1979-06-25 Semiconductor device Pending JPS564275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8000579A JPS564275A (en) 1979-06-25 1979-06-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8000579A JPS564275A (en) 1979-06-25 1979-06-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS564275A true JPS564275A (en) 1981-01-17

Family

ID=13706207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8000579A Pending JPS564275A (en) 1979-06-25 1979-06-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS564275A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243594U (en) * 1985-09-06 1987-03-16
JPS6398190U (en) * 1986-12-12 1988-06-25
JP2009512999A (en) * 2005-09-21 2009-03-26 インターナショナル レクティファイアー コーポレイション Semiconductor package

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107779A (en) * 1975-02-19 1976-09-24 Siemens Ag
JPS5224874B1 (en) * 1971-01-25 1977-07-04

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5224874B1 (en) * 1971-01-25 1977-07-04
JPS51107779A (en) * 1975-02-19 1976-09-24 Siemens Ag

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243594U (en) * 1985-09-06 1987-03-16
JPS6398190U (en) * 1986-12-12 1988-06-25
JPH0418557Y2 (en) * 1986-12-12 1992-04-24
JP2009512999A (en) * 2005-09-21 2009-03-26 インターナショナル レクティファイアー コーポレイション Semiconductor package

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