JPS55123161A - Darlington-connection semiconductor device - Google Patents

Darlington-connection semiconductor device

Info

Publication number
JPS55123161A
JPS55123161A JP3145379A JP3145379A JPS55123161A JP S55123161 A JPS55123161 A JP S55123161A JP 3145379 A JP3145379 A JP 3145379A JP 3145379 A JP3145379 A JP 3145379A JP S55123161 A JPS55123161 A JP S55123161A
Authority
JP
Japan
Prior art keywords
type
regions
darlington
ring
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3145379A
Other languages
Japanese (ja)
Other versions
JPS6217387B2 (en
Inventor
Shinichi Akashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3145379A priority Critical patent/JPS55123161A/en
Publication of JPS55123161A publication Critical patent/JPS55123161A/en
Publication of JPS6217387B2 publication Critical patent/JPS6217387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the reliability of a device greatly by providing equipotential electrodes and a guard-ring in the collector-base junction and around a diffused resistor in a Darlington-connection semiconductor device of complicated shape. CONSTITUTION:Two transistors forming Darlington connection are formed in a p- type semiconductor substrate 1, which is to become their common collector region. That is, n<+>-type base regions 2, 2' of the two transistors are formed by diffusion in substrate 1, and p<+>-type emitter regions 3, 3' are formed inside. Removed away from these in substrate 1, an n<+>-type diffusion resistor 10 is formed, and the entire surface is surrounded with a p<+>-type guard-ring 4. Further, by extending this, a p<+>-type guard-ring 5 is formed by diffusion between regions 2' and 10. Next, the entire surface is convered with SiO2 film, and by providing openings, electrodes 7a', 7b', 7c are fitted on the respective regions. Further, equipotential electrodes 8, 9 are formed on film 6, surrounding each region. By this, deterioration in voltage resistance is greatly reduced.
JP3145379A 1979-03-16 1979-03-16 Darlington-connection semiconductor device Granted JPS55123161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3145379A JPS55123161A (en) 1979-03-16 1979-03-16 Darlington-connection semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3145379A JPS55123161A (en) 1979-03-16 1979-03-16 Darlington-connection semiconductor device

Publications (2)

Publication Number Publication Date
JPS55123161A true JPS55123161A (en) 1980-09-22
JPS6217387B2 JPS6217387B2 (en) 1987-04-17

Family

ID=12331665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3145379A Granted JPS55123161A (en) 1979-03-16 1979-03-16 Darlington-connection semiconductor device

Country Status (1)

Country Link
JP (1) JPS55123161A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135507A (en) * 1980-02-28 1981-10-23 Montedison Spa Continuous removal of monomer from polymer emulsion
JPS57162462A (en) * 1981-03-31 1982-10-06 Toshiba Corp Semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
JPS61206262A (en) * 1985-03-11 1986-09-12 Shindengen Electric Mfg Co Ltd High withstanding-voltage planar type semiconductor device
DE102006007040A1 (en) * 2006-02-15 2007-08-16 Austriamicrosystems Ag Component with integrated heating element and method for heating a semiconductor body

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54105977A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Semiconductor device
JPS5559768A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Darlington power transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54105977A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Semiconductor device
JPS5559768A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Darlington power transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135507A (en) * 1980-02-28 1981-10-23 Montedison Spa Continuous removal of monomer from polymer emulsion
JPS57162462A (en) * 1981-03-31 1982-10-06 Toshiba Corp Semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
JPS61206262A (en) * 1985-03-11 1986-09-12 Shindengen Electric Mfg Co Ltd High withstanding-voltage planar type semiconductor device
DE102006007040A1 (en) * 2006-02-15 2007-08-16 Austriamicrosystems Ag Component with integrated heating element and method for heating a semiconductor body

Also Published As

Publication number Publication date
JPS6217387B2 (en) 1987-04-17

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