JPS5615068A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5615068A
JPS5615068A JP9134779A JP9134779A JPS5615068A JP S5615068 A JPS5615068 A JP S5615068A JP 9134779 A JP9134779 A JP 9134779A JP 9134779 A JP9134779 A JP 9134779A JP S5615068 A JPS5615068 A JP S5615068A
Authority
JP
Japan
Prior art keywords
type
region
junction depth
mosfet
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9134779A
Other languages
Japanese (ja)
Inventor
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9134779A priority Critical patent/JPS5615068A/en
Publication of JPS5615068A publication Critical patent/JPS5615068A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Abstract

PURPOSE:To integrate an MOSFET and a bipolar transistor by forming the source and the drain of one conductivity type MOSFET and the emitter of the bipolar transistor of substantially equal junction depth one conductivity type region. CONSTITUTION:An N-type well 21 and a collector 22 are formed in the same junction depth N-type island region in a P-type Si substrate 20. The source and the drain 23, 23' of the P-type MOSFET and the base 24 thereof are formed in the same junction depth P<+>-type diffused region. The source and drain 25, 25' and the emitter 26 and the collector 22 in the conact region 27 of the N-type MOSFET are formed of equal junction depth N<+>-type diffused region. In this manner, the bipolar transistor 2' and the complementary MOSFET1' are formed on the same substrate.
JP9134779A 1979-07-18 1979-07-18 Semiconductor device and manufacture thereof Pending JPS5615068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9134779A JPS5615068A (en) 1979-07-18 1979-07-18 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9134779A JPS5615068A (en) 1979-07-18 1979-07-18 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5615068A true JPS5615068A (en) 1981-02-13

Family

ID=14023874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9134779A Pending JPS5615068A (en) 1979-07-18 1979-07-18 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5615068A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2531812A1 (en) * 1982-08-13 1984-02-17 Hitachi Ltd "BI-CMOS-IC" TYPE INTEGRATED SEMICONDUCTOR CIRCUIT DEVICE AND ITS MANUFACTURING PROCESS
JPS59229960A (en) * 1983-06-13 1984-12-24 Hitachi Ltd Incoming transfer system
JPS63278372A (en) * 1987-05-11 1988-11-16 Nippon Precision Saakitsutsu Kk Manufacture of bipolar transistor
US4857766A (en) * 1987-10-30 1989-08-15 International Business Machine Corporation BiMos input circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2531812A1 (en) * 1982-08-13 1984-02-17 Hitachi Ltd "BI-CMOS-IC" TYPE INTEGRATED SEMICONDUCTOR CIRCUIT DEVICE AND ITS MANUFACTURING PROCESS
JPS5931052A (en) * 1982-08-13 1984-02-18 Hitachi Ltd Semiconductor ic device and manufacture thereof
DE3329224A1 (en) * 1982-08-13 1984-03-15 Hitachi, Ltd., Tokyo INTEGRATED SEMICONDUCTOR CIRCUIT DEVICE
JPH0410226B2 (en) * 1982-08-13 1992-02-24
JPS59229960A (en) * 1983-06-13 1984-12-24 Hitachi Ltd Incoming transfer system
JPS63278372A (en) * 1987-05-11 1988-11-16 Nippon Precision Saakitsutsu Kk Manufacture of bipolar transistor
US4857766A (en) * 1987-10-30 1989-08-15 International Business Machine Corporation BiMos input circuit

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