JPS567472A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS567472A
JPS567472A JP8321179A JP8321179A JPS567472A JP S567472 A JPS567472 A JP S567472A JP 8321179 A JP8321179 A JP 8321179A JP 8321179 A JP8321179 A JP 8321179A JP S567472 A JPS567472 A JP S567472A
Authority
JP
Japan
Prior art keywords
region
type
atomic
emitter
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8321179A
Other languages
Japanese (ja)
Other versions
JPS6036108B2 (en
Inventor
Norikazu Ouchi
Hisayoshi Yamoto
Hisao Hayashi
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8321179A priority Critical patent/JPS6036108B2/en
Priority to CA000333370A priority patent/CA1136773A/en
Priority to US06/065,262 priority patent/US4302763A/en
Priority to GB7928105A priority patent/GB2029096B/en
Priority to DE19792932976 priority patent/DE2932976A1/en
Priority to FR7920711A priority patent/FR2435127A1/en
Publication of JPS567472A publication Critical patent/JPS567472A/en
Publication of JPS6036108B2 publication Critical patent/JPS6036108B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a bipolar transistor having hFE by diffusing and forming a base region on a semiconductor substrate which forms a collector region, and providing an emitter region containing a predetermined impurity concentration and oxygen while positioning on the surface layer thereof to form a heterojunction. CONSTITUTION:A P-type base region 2 is diffused and formed on an N-type Si substrate 1, and while positioning on the surface of the above region, an N-type emitter region 3 having an area smaller than the region 2 is provided. Upon this occasion, the region 3 is constituted by polycrystal Si consisting of 44 atomic % of O2, 0.6 atomic % of P and 55.4 atomic % of Si or by a polycrystal Si region 3b similarly through the N-type region 3a provided in the region 2, and the emitter function is generated in the above region 3. Thus, if a heterojunction bipolar transistor is formed by a POPOS layer, the characteristic of the region 3 approximates to that of SiO2 by containing O2, and the forbidden gap further increases to an extent greater than that of SiO2, the Hall recombination velocity being reduced and a high hFE can be obtained.
JP8321179A 1978-08-14 1979-06-29 semiconductor equipment Expired JPS6036108B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP8321179A JPS6036108B2 (en) 1979-06-29 1979-06-29 semiconductor equipment
CA000333370A CA1136773A (en) 1978-08-14 1979-08-08 Semiconductor device
US06/065,262 US4302763A (en) 1978-08-14 1979-08-09 Semiconductor device
GB7928105A GB2029096B (en) 1978-08-14 1979-08-13 Semiconductor devices
DE19792932976 DE2932976A1 (en) 1978-08-14 1979-08-14 SEMICONDUCTOR COMPONENT
FR7920711A FR2435127A1 (en) 1978-08-14 1979-08-14 SEMICONDUCTOR COMPONENT, IN PARTICULAR BIPOLAR HETEROGENEOUS JUNCTION TRANSISTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8321179A JPS6036108B2 (en) 1979-06-29 1979-06-29 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS567472A true JPS567472A (en) 1981-01-26
JPS6036108B2 JPS6036108B2 (en) 1985-08-19

Family

ID=13795981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8321179A Expired JPS6036108B2 (en) 1978-08-14 1979-06-29 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6036108B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983003032A1 (en) * 1982-02-19 1983-09-01 Tanaka, Tomoyuki Semiconductor device and method of fabricating the same
JPS61180480A (en) * 1984-10-02 1986-08-13 イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ Bipolar hetero junction transistor and manufacture thereof
JPH03209774A (en) * 1990-08-02 1991-09-12 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
JPH06101470B2 (en) * 1984-02-03 1994-12-12 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド Integrated circuit device with active elements consisting of bipolar transistors formed in slots

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983003032A1 (en) * 1982-02-19 1983-09-01 Tanaka, Tomoyuki Semiconductor device and method of fabricating the same
EP0101739A1 (en) * 1982-02-19 1984-03-07 Hitachi, Ltd. Heterojunction transistor and method of fabricating the same
EP0101739B1 (en) * 1982-02-19 1990-05-23 Hitachi, Ltd. Heterojunction transistor and method of fabricating the same
JPH06101470B2 (en) * 1984-02-03 1994-12-12 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド Integrated circuit device with active elements consisting of bipolar transistors formed in slots
JPS61180480A (en) * 1984-10-02 1986-08-13 イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ Bipolar hetero junction transistor and manufacture thereof
JPH03209774A (en) * 1990-08-02 1991-09-12 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element

Also Published As

Publication number Publication date
JPS6036108B2 (en) 1985-08-19

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