JPS567472A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS567472A JPS567472A JP8321179A JP8321179A JPS567472A JP S567472 A JPS567472 A JP S567472A JP 8321179 A JP8321179 A JP 8321179A JP 8321179 A JP8321179 A JP 8321179A JP S567472 A JPS567472 A JP S567472A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- atomic
- emitter
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a bipolar transistor having hFE by diffusing and forming a base region on a semiconductor substrate which forms a collector region, and providing an emitter region containing a predetermined impurity concentration and oxygen while positioning on the surface layer thereof to form a heterojunction. CONSTITUTION:A P-type base region 2 is diffused and formed on an N-type Si substrate 1, and while positioning on the surface of the above region, an N-type emitter region 3 having an area smaller than the region 2 is provided. Upon this occasion, the region 3 is constituted by polycrystal Si consisting of 44 atomic % of O2, 0.6 atomic % of P and 55.4 atomic % of Si or by a polycrystal Si region 3b similarly through the N-type region 3a provided in the region 2, and the emitter function is generated in the above region 3. Thus, if a heterojunction bipolar transistor is formed by a POPOS layer, the characteristic of the region 3 approximates to that of SiO2 by containing O2, and the forbidden gap further increases to an extent greater than that of SiO2, the Hall recombination velocity being reduced and a high hFE can be obtained.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8321179A JPS6036108B2 (en) | 1979-06-29 | 1979-06-29 | semiconductor equipment |
CA000333370A CA1136773A (en) | 1978-08-14 | 1979-08-08 | Semiconductor device |
US06/065,262 US4302763A (en) | 1978-08-14 | 1979-08-09 | Semiconductor device |
GB7928105A GB2029096B (en) | 1978-08-14 | 1979-08-13 | Semiconductor devices |
FR7920711A FR2435127A1 (en) | 1978-08-14 | 1979-08-14 | SEMICONDUCTOR COMPONENT, IN PARTICULAR BIPOLAR HETEROGENEOUS JUNCTION TRANSISTOR |
DE19792932976 DE2932976A1 (en) | 1978-08-14 | 1979-08-14 | SEMICONDUCTOR COMPONENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8321179A JPS6036108B2 (en) | 1979-06-29 | 1979-06-29 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS567472A true JPS567472A (en) | 1981-01-26 |
JPS6036108B2 JPS6036108B2 (en) | 1985-08-19 |
Family
ID=13795981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8321179A Expired JPS6036108B2 (en) | 1978-08-14 | 1979-06-29 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6036108B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1983003032A1 (en) * | 1982-02-19 | 1983-09-01 | Tanaka, Tomoyuki | Semiconductor device and method of fabricating the same |
JPS61180480A (en) * | 1984-10-02 | 1986-08-13 | イメツク(インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム)ヴイ・ズイ−・ダブリユ | Bipolar hetero junction transistor and manufacture thereof |
JPH03209774A (en) * | 1990-08-02 | 1991-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor element |
JPH06101470B2 (en) * | 1984-02-03 | 1994-12-12 | アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド | Integrated circuit device with active elements consisting of bipolar transistors formed in slots |
-
1979
- 1979-06-29 JP JP8321179A patent/JPS6036108B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1983003032A1 (en) * | 1982-02-19 | 1983-09-01 | Tanaka, Tomoyuki | Semiconductor device and method of fabricating the same |
EP0101739A1 (en) * | 1982-02-19 | 1984-03-07 | Hitachi, Ltd. | Heterojunction transistor and method of fabricating the same |
EP0101739B1 (en) * | 1982-02-19 | 1990-05-23 | Hitachi, Ltd. | Heterojunction transistor and method of fabricating the same |
JPH06101470B2 (en) * | 1984-02-03 | 1994-12-12 | アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド | Integrated circuit device with active elements consisting of bipolar transistors formed in slots |
JPS61180480A (en) * | 1984-10-02 | 1986-08-13 | イメツク(インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム)ヴイ・ズイ−・ダブリユ | Bipolar hetero junction transistor and manufacture thereof |
JPH03209774A (en) * | 1990-08-02 | 1991-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor element |
Also Published As
Publication number | Publication date |
---|---|
JPS6036108B2 (en) | 1985-08-19 |
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