JPS54126478A - Transistor - Google Patents

Transistor

Info

Publication number
JPS54126478A
JPS54126478A JP3429978A JP3429978A JPS54126478A JP S54126478 A JPS54126478 A JP S54126478A JP 3429978 A JP3429978 A JP 3429978A JP 3429978 A JP3429978 A JP 3429978A JP S54126478 A JPS54126478 A JP S54126478A
Authority
JP
Japan
Prior art keywords
region
type
layer
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3429978A
Other languages
Japanese (ja)
Inventor
Masanori Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3429978A priority Critical patent/JPS54126478A/en
Publication of JPS54126478A publication Critical patent/JPS54126478A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve a high frequency characteristic by making the depletion layer extension width of the collector.base junction just below the emitter, which is generated at an operation time, smaller than the depletion layer extension width of other parts.
CONSTITUTION: N--type layer 17 is grown epitaxially on N+-type semiconductor substrate 11, and N-type impurity is diffused selectively only to the part which becomes after a part just below the emitter region, thereby providing N+-type region 18. Next, N-type layer 12 is grown on all the surface again by the epitaxial method, and p-type base region 13 is provided in layer 12, and N+-type emitter region 14 is formed in the position corresponding to region 18 in region 13 by diffusion. After that, all the surface is covered with oxide film 15, and windows are opened to fit electrodes. By this method, the extension of depletion later 16 which is generated from the junction between the collector and the base just below region 14 is prevented from extending because of the existence of region 18. As a result, the time when the carrier injected from region 14 passes through depletion layer 16 is shortened, and the cut-off frequency can be prevented from being deteriorated.
COPYRIGHT: (C)1979,JPO&Japio
JP3429978A 1978-03-24 1978-03-24 Transistor Pending JPS54126478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3429978A JPS54126478A (en) 1978-03-24 1978-03-24 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3429978A JPS54126478A (en) 1978-03-24 1978-03-24 Transistor

Publications (1)

Publication Number Publication Date
JPS54126478A true JPS54126478A (en) 1979-10-01

Family

ID=12410271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3429978A Pending JPS54126478A (en) 1978-03-24 1978-03-24 Transistor

Country Status (1)

Country Link
JP (1) JPS54126478A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123062A (en) * 1983-12-08 1985-07-01 Matsushita Electronics Corp Manufacture of semiconductor integrated circuit
US5374846A (en) * 1990-08-31 1994-12-20 Nec Corporation Bipolar transistor with a particular base and collector regions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123062A (en) * 1983-12-08 1985-07-01 Matsushita Electronics Corp Manufacture of semiconductor integrated circuit
US5374846A (en) * 1990-08-31 1994-12-20 Nec Corporation Bipolar transistor with a particular base and collector regions

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