JPS54137282A - Lateral transistor - Google Patents
Lateral transistorInfo
- Publication number
- JPS54137282A JPS54137282A JP4558278A JP4558278A JPS54137282A JP S54137282 A JPS54137282 A JP S54137282A JP 4558278 A JP4558278 A JP 4558278A JP 4558278 A JP4558278 A JP 4558278A JP S54137282 A JPS54137282 A JP S54137282A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- transistor
- base region
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To reduce the extension of the depletion layer to avoid occurrence of the punch-through and thus to secure a high dielectric strength, high fFE and high fT respectively by giving an inclination to the impurity density so that the impurity density in the base region may be reduced from the emitter region toward the collector region.
CONSTITUTION: N-type layer 2 is epitaxial-grown on P-type Si substrate 1 and then separated at P-type region 3 into island region 21 and 22, and N-type region 8 is formed by diffusion within region 22 to be used later as the base region of the PNP transistor. In this case, the surface impurity density of region 8 is set higher than that of region 22 to be used as the base region featuring the density inclination. After this, P-type base region 4 of the NPN transistor, P-type base region 4 of the NPN transistor and N-type emitter region 5 are formed by diffusion at region 21, 22 and 8 respectively. And N-type emitter region 7 is provided within region 4 to form the desired complementary transistor of NPN and PNP.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4558278A JPS54137282A (en) | 1978-04-17 | 1978-04-17 | Lateral transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4558278A JPS54137282A (en) | 1978-04-17 | 1978-04-17 | Lateral transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54137282A true JPS54137282A (en) | 1979-10-24 |
Family
ID=12723332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4558278A Pending JPS54137282A (en) | 1978-04-17 | 1978-04-17 | Lateral transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54137282A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55137370U (en) * | 1980-04-02 | 1980-09-30 | ||
CN1062234C (en) * | 1994-01-20 | 2001-02-21 | 永田昭俊 | Box pallet |
-
1978
- 1978-04-17 JP JP4558278A patent/JPS54137282A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55137370U (en) * | 1980-04-02 | 1980-09-30 | ||
CN1062234C (en) * | 1994-01-20 | 2001-02-21 | 永田昭俊 | Box pallet |
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