JPS54154980A - Constant voltage diode - Google Patents

Constant voltage diode

Info

Publication number
JPS54154980A
JPS54154980A JP6365078A JP6365078A JPS54154980A JP S54154980 A JPS54154980 A JP S54154980A JP 6365078 A JP6365078 A JP 6365078A JP 6365078 A JP6365078 A JP 6365078A JP S54154980 A JPS54154980 A JP S54154980A
Authority
JP
Japan
Prior art keywords
region
layer
junction
diffusion
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6365078A
Other languages
Japanese (ja)
Inventor
Giichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6365078A priority Critical patent/JPS54154980A/en
Publication of JPS54154980A publication Critical patent/JPS54154980A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To decrease the noise by providing the region featuring a higher impurity density than the semiconductor layer within the semiconductor layer to cause the PN junction and forming the shallow diffusion region at the junction part from the surface with the density higher than the layer and lower than the region each and thus to position the breakdown part within the layer.
CONSTITUTION: N++-type region 2 to be the cathod is formed by diffusion to diffusion layer 1 or P+-type substrate to be the anode, and thus the PN junction is caused at the interface between layer 1 and region 2. Then the PN junction exposed on the surface of layer 1 is covered to form by diffusion shallow N+-type region 3 within layer 1 and region 2. In this case, the impurity density of region 3 is set lower than region 2 and higher than layer 1 respectively. Thus, the density of the PN junction features the minimum on surface A' of layer 1 and the maximum at intersection B between region 2 and 3 to cause the breakdown phenomenon at point B. As a result, the noise can be reduced with the stabilized breakdown voltage and reduced initial drift each.
COPYRIGHT: (C)1979,JPO&Japio
JP6365078A 1978-05-26 1978-05-26 Constant voltage diode Pending JPS54154980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6365078A JPS54154980A (en) 1978-05-26 1978-05-26 Constant voltage diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6365078A JPS54154980A (en) 1978-05-26 1978-05-26 Constant voltage diode

Publications (1)

Publication Number Publication Date
JPS54154980A true JPS54154980A (en) 1979-12-06

Family

ID=13235428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6365078A Pending JPS54154980A (en) 1978-05-26 1978-05-26 Constant voltage diode

Country Status (1)

Country Link
JP (1) JPS54154980A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63301569A (en) * 1987-06-01 1988-12-08 Nec Corp Semiconductor device
JPH0233976A (en) * 1988-07-22 1990-02-05 Mitsubishi Electric Corp Zener diode
JPH02187071A (en) * 1989-01-13 1990-07-23 Mitsubishi Electric Corp Semiconductor device
JPH02214168A (en) * 1989-02-15 1990-08-27 Mitsubishi Electric Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63301569A (en) * 1987-06-01 1988-12-08 Nec Corp Semiconductor device
JPH0233976A (en) * 1988-07-22 1990-02-05 Mitsubishi Electric Corp Zener diode
JPH02187071A (en) * 1989-01-13 1990-07-23 Mitsubishi Electric Corp Semiconductor device
JP2518372B2 (en) * 1989-01-13 1996-07-24 三菱電機株式会社 Semiconductor device
JPH02214168A (en) * 1989-02-15 1990-08-27 Mitsubishi Electric Corp Semiconductor device

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