JPS54154980A - Constant voltage diode - Google Patents
Constant voltage diodeInfo
- Publication number
- JPS54154980A JPS54154980A JP6365078A JP6365078A JPS54154980A JP S54154980 A JPS54154980 A JP S54154980A JP 6365078 A JP6365078 A JP 6365078A JP 6365078 A JP6365078 A JP 6365078A JP S54154980 A JPS54154980 A JP S54154980A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- junction
- diffusion
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To decrease the noise by providing the region featuring a higher impurity density than the semiconductor layer within the semiconductor layer to cause the PN junction and forming the shallow diffusion region at the junction part from the surface with the density higher than the layer and lower than the region each and thus to position the breakdown part within the layer.
CONSTITUTION: N++-type region 2 to be the cathod is formed by diffusion to diffusion layer 1 or P+-type substrate to be the anode, and thus the PN junction is caused at the interface between layer 1 and region 2. Then the PN junction exposed on the surface of layer 1 is covered to form by diffusion shallow N+-type region 3 within layer 1 and region 2. In this case, the impurity density of region 3 is set lower than region 2 and higher than layer 1 respectively. Thus, the density of the PN junction features the minimum on surface A' of layer 1 and the maximum at intersection B between region 2 and 3 to cause the breakdown phenomenon at point B. As a result, the noise can be reduced with the stabilized breakdown voltage and reduced initial drift each.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6365078A JPS54154980A (en) | 1978-05-26 | 1978-05-26 | Constant voltage diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6365078A JPS54154980A (en) | 1978-05-26 | 1978-05-26 | Constant voltage diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54154980A true JPS54154980A (en) | 1979-12-06 |
Family
ID=13235428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6365078A Pending JPS54154980A (en) | 1978-05-26 | 1978-05-26 | Constant voltage diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54154980A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63301569A (en) * | 1987-06-01 | 1988-12-08 | Nec Corp | Semiconductor device |
JPH0233976A (en) * | 1988-07-22 | 1990-02-05 | Mitsubishi Electric Corp | Zener diode |
JPH02187071A (en) * | 1989-01-13 | 1990-07-23 | Mitsubishi Electric Corp | Semiconductor device |
JPH02214168A (en) * | 1989-02-15 | 1990-08-27 | Mitsubishi Electric Corp | Semiconductor device |
-
1978
- 1978-05-26 JP JP6365078A patent/JPS54154980A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63301569A (en) * | 1987-06-01 | 1988-12-08 | Nec Corp | Semiconductor device |
JPH0233976A (en) * | 1988-07-22 | 1990-02-05 | Mitsubishi Electric Corp | Zener diode |
JPH02187071A (en) * | 1989-01-13 | 1990-07-23 | Mitsubishi Electric Corp | Semiconductor device |
JP2518372B2 (en) * | 1989-01-13 | 1996-07-24 | 三菱電機株式会社 | Semiconductor device |
JPH02214168A (en) * | 1989-02-15 | 1990-08-27 | Mitsubishi Electric Corp | Semiconductor device |
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