JPS56150862A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56150862A
JPS56150862A JP5467380A JP5467380A JPS56150862A JP S56150862 A JPS56150862 A JP S56150862A JP 5467380 A JP5467380 A JP 5467380A JP 5467380 A JP5467380 A JP 5467380A JP S56150862 A JPS56150862 A JP S56150862A
Authority
JP
Japan
Prior art keywords
base
minority carrier
stabilize
occurrence
vicinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5467380A
Other languages
Japanese (ja)
Inventor
Shinichi Shiyugiyou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5467380A priority Critical patent/JPS56150862A/en
Publication of JPS56150862A publication Critical patent/JPS56150862A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

Abstract

PURPOSE:To stabilize the operation of a switching device by forming the same conductivity type high density region as a base in a region in which an emitter and base junction is exposed on the main surface, thereby eliminating the occurrence of the injection of minority carrier in the vicinity of the surface. CONSTITUTION:In, for example, in a triac, regions 7, 8 having the same conductivity type high impurity density (P<+> type) as a base layer are formed in the vicinity of the surface of a P-N junction in which minority carrier starts injecting in the base layer 3 from the emitter layers 5 and 6 of T1 and a gate. These regions 7, 8 have diffusion potential higher than the other part, resulting in the elimination of the occurrence of the minority carrier injection from this part. Since it can eliminate the affect of the surface, it can stabilize the operating characteristics of the device for switching with a small gate or base current.
JP5467380A 1980-04-24 1980-04-24 Semiconductor device Pending JPS56150862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5467380A JPS56150862A (en) 1980-04-24 1980-04-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5467380A JPS56150862A (en) 1980-04-24 1980-04-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56150862A true JPS56150862A (en) 1981-11-21

Family

ID=12977294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5467380A Pending JPS56150862A (en) 1980-04-24 1980-04-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56150862A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61158179A (en) * 1984-12-28 1986-07-17 Toshiba Corp Semiconductor device
JPS61214471A (en) * 1985-03-19 1986-09-24 Res Dev Corp Of Japan Gate controlled semiconductor device
US5036377A (en) * 1988-08-03 1991-07-30 Texas Instruments Incorporated Triac array
JPH06314781A (en) * 1992-03-27 1994-11-08 Agency Of Ind Science & Technol Surge protective device
KR100317601B1 (en) * 1998-11-10 2002-05-13 곽정소 Planer type triacs and manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538077A (en) * 1978-09-11 1980-03-17 Mitsubishi Electric Corp Thyrister

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538077A (en) * 1978-09-11 1980-03-17 Mitsubishi Electric Corp Thyrister

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61158179A (en) * 1984-12-28 1986-07-17 Toshiba Corp Semiconductor device
JPS61214471A (en) * 1985-03-19 1986-09-24 Res Dev Corp Of Japan Gate controlled semiconductor device
US5036377A (en) * 1988-08-03 1991-07-30 Texas Instruments Incorporated Triac array
JPH06314781A (en) * 1992-03-27 1994-11-08 Agency Of Ind Science & Technol Surge protective device
KR100317601B1 (en) * 1998-11-10 2002-05-13 곽정소 Planer type triacs and manufacturing method

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