JPS5496975A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5496975A JPS5496975A JP399378A JP399378A JPS5496975A JP S5496975 A JPS5496975 A JP S5496975A JP 399378 A JP399378 A JP 399378A JP 399378 A JP399378 A JP 399378A JP S5496975 A JPS5496975 A JP S5496975A
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- emitter
- type
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a lateral transistor which features a high emitter-earthed current amplification factor and good frequency characteristics by forming a high impurity density region which is the same conducting type as the base different from the buried layer right under the emitter within the base region or right under the base draw-out impurity region.
CONSTITUTION: N+-buried layer 13 is formed through diffusion on P-type Si substrate 11, and N-type layer 12 to become the base region is epitaxial-grown on the entire surface with its surface covered with SiO2 film 14. Then the window is drilled to film 14 in a smaller size than the emitter region and the base draw-out high density impurity region and enclosing these regions completely in order to inject the impurity ion. Thus, N+-buried region 15 is formed through the heat treatment. After this, the window is drilled again at the emitter and collector forming regions to form P-type emitter region 16 and P-type collector region 17 through diffusion with base electrode draw-out region 18 added. Then Al wiring 19 is coated to each region to form a lateral transistor.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP399378A JPS5496975A (en) | 1978-01-17 | 1978-01-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP399378A JPS5496975A (en) | 1978-01-17 | 1978-01-17 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5496975A true JPS5496975A (en) | 1979-07-31 |
Family
ID=11572530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP399378A Pending JPS5496975A (en) | 1978-01-17 | 1978-01-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5496975A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63216374A (en) * | 1987-03-04 | 1988-09-08 | Nec Corp | Lateral semiconductor device |
-
1978
- 1978-01-17 JP JP399378A patent/JPS5496975A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63216374A (en) * | 1987-03-04 | 1988-09-08 | Nec Corp | Lateral semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5623771A (en) | Semiconductor memory | |
JPS567463A (en) | Semiconductor device and its manufacture | |
JPS56110251A (en) | High withsand voltage semiconductor device | |
JPS5496975A (en) | Semiconductor device | |
JPS54149465A (en) | Production of semiconductor device | |
JPS54139490A (en) | Semiconductor memory unit | |
JPS5413279A (en) | Manufacture for semiconductor integrated circuit device | |
JPS54148486A (en) | Semiconductor device | |
JPS54101289A (en) | Semiconductor device | |
JPS5538082A (en) | Formation for buried layer of semiconductor device | |
JPS5577172A (en) | Semiconductor device | |
JPS54154271A (en) | Manufacture of semiconductor device | |
JPS5541787A (en) | Semiconductor device | |
JPS5490973A (en) | Semiconductor device | |
JPS5245292A (en) | Device for integrated circuit of semiconductor | |
JPS5587476A (en) | Semiconductor device | |
JPS5586152A (en) | Manufacture of semiconductor device | |
JPS5563879A (en) | Semiconductor device | |
JPS5368990A (en) | Production of semiconductor integrated circuit | |
JPS5522893A (en) | Semiconductor integrated circuit device and its manufacturing method | |
JPS54158889A (en) | Manufacture of semiconductor device | |
JPS5413281A (en) | Longitudinal pnp transistor assembled in semiconductor integrated circuit | |
JPS54142080A (en) | Semiconductor device | |
JPS5489477A (en) | Production of semiconductor device | |
JPS54109384A (en) | Semiconductor device |