JPS5249780A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5249780A
JPS5249780A JP12532275A JP12532275A JPS5249780A JP S5249780 A JPS5249780 A JP S5249780A JP 12532275 A JP12532275 A JP 12532275A JP 12532275 A JP12532275 A JP 12532275A JP S5249780 A JPS5249780 A JP S5249780A
Authority
JP
Japan
Prior art keywords
integrated circuit
region
semiconductor integrated
forming
conduction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12532275A
Other languages
Japanese (ja)
Inventor
Takeaki Okabe
Shikayuki Ochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12532275A priority Critical patent/JPS5249780A/en
Publication of JPS5249780A publication Critical patent/JPS5249780A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a sufficiently isolated caractor diode, by forming a first low concentration layer of the same conduction type on a semiconductor substrate, forming second and third regions of the conduction type different from that of the substrate on a part of said laeyr, forming a fourth region of the same conduction type as that of thesubstrate within the third region to make PN junction, and grounding the second region.
COPYRIGHT: (C)1977,JPO&Japio
JP12532275A 1975-10-20 1975-10-20 Semiconductor integrated circuit Pending JPS5249780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12532275A JPS5249780A (en) 1975-10-20 1975-10-20 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12532275A JPS5249780A (en) 1975-10-20 1975-10-20 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5249780A true JPS5249780A (en) 1977-04-21

Family

ID=14907233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12532275A Pending JPS5249780A (en) 1975-10-20 1975-10-20 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5249780A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989603U (en) * 1982-12-02 1984-06-18 日立造船株式会社 Universal joint holding device for rolling mill drive
JPH07147420A (en) * 1993-11-25 1995-06-06 Nec Corp Variable capacity device and semiconductor integrated circuit device provided with it

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989603U (en) * 1982-12-02 1984-06-18 日立造船株式会社 Universal joint holding device for rolling mill drive
JPH07147420A (en) * 1993-11-25 1995-06-06 Nec Corp Variable capacity device and semiconductor integrated circuit device provided with it

Similar Documents

Publication Publication Date Title
JPS5356972A (en) Mesa type semiconductor device
JPS53108382A (en) Semiconductor device
JPS5234671A (en) Semiconductor integrated circuit
JPS5249780A (en) Semiconductor integrated circuit
JPS52124889A (en) Semiconductor photoelectric transducer
JPS52104076A (en) Semiconductor unit
JPS5272586A (en) Production of semiconductor device
JPS5415674A (en) Semiconductor device containing schottky barrier
JPS52120773A (en) Semiconductor element
JPS52129380A (en) Semiconductor device
JPS5263080A (en) Production of semiconductor integrated circuit device
JPS547891A (en) Manufacture for planar semiconductor light emission device
JPS5316586A (en) Semiconductor device
JPS5420670A (en) Surface stabilizing method of semiconductor elements
JPS5265664A (en) Selective introduction of impurity in compound semiconductor substrate
JPS5265689A (en) Semiconductor integrated circuit and its production
JPS522180A (en) Method of fabricating mos semiconductor integrated circuit
JPS51123071A (en) Fabrication technique of semiconductor device
JPS5352388A (en) Semiconductor device
JPS5314585A (en) Semiconductor device
JPS5434784A (en) Semiconductor integrated circuit device
JPS5245292A (en) Device for integrated circuit of semiconductor
JPS546471A (en) Manufacture of semiconductor device
JPS53100781A (en) Semiconductor device
JPS5380181A (en) Semiconductor device