JPS547891A - Manufacture for planar semiconductor light emission device - Google Patents

Manufacture for planar semiconductor light emission device

Info

Publication number
JPS547891A
JPS547891A JP7278077A JP7278077A JPS547891A JP S547891 A JPS547891 A JP S547891A JP 7278077 A JP7278077 A JP 7278077A JP 7278077 A JP7278077 A JP 7278077A JP S547891 A JPS547891 A JP S547891A
Authority
JP
Japan
Prior art keywords
manufacture
light emission
semiconductor light
emission device
planar semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7278077A
Other languages
Japanese (ja)
Inventor
Toshimasa Ishida
Haruo Mori
Tamao Kubota
Kazumasa Ono
Hidemaro Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7278077A priority Critical patent/JPS547891A/en
Publication of JPS547891A publication Critical patent/JPS547891A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To lead in the p and n layer electrodes from the same plane, by epitaxialgrowing the III-V group semiconductor on the substrate having grooves or holes, and by forming pn junction with planar constitution.
COPYRIGHT: (C)1979,JPO&Japio
JP7278077A 1977-06-21 1977-06-21 Manufacture for planar semiconductor light emission device Pending JPS547891A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7278077A JPS547891A (en) 1977-06-21 1977-06-21 Manufacture for planar semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7278077A JPS547891A (en) 1977-06-21 1977-06-21 Manufacture for planar semiconductor light emission device

Publications (1)

Publication Number Publication Date
JPS547891A true JPS547891A (en) 1979-01-20

Family

ID=13499234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7278077A Pending JPS547891A (en) 1977-06-21 1977-06-21 Manufacture for planar semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS547891A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5035438A (en) * 1973-07-20 1975-04-04
US5436196A (en) * 1993-10-05 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor laser
CN102130250A (en) * 2010-09-28 2011-07-20 映瑞光电科技(上海)有限公司 Light emitting diode (LED) and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5180186A (en) * 1975-01-08 1976-07-13 Hitachi Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5180186A (en) * 1975-01-08 1976-07-13 Hitachi Ltd

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5035438A (en) * 1973-07-20 1975-04-04
JPS563932B2 (en) * 1973-07-20 1981-01-28
US5436196A (en) * 1993-10-05 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor laser
CN102130250A (en) * 2010-09-28 2011-07-20 映瑞光电科技(上海)有限公司 Light emitting diode (LED) and manufacturing method thereof

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