JPS5425676A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5425676A
JPS5425676A JP9173377A JP9173377A JPS5425676A JP S5425676 A JPS5425676 A JP S5425676A JP 9173377 A JP9173377 A JP 9173377A JP 9173377 A JP9173377 A JP 9173377A JP S5425676 A JPS5425676 A JP S5425676A
Authority
JP
Japan
Prior art keywords
semiconductor device
branching region
junction
polycrystal
crossing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9173377A
Other languages
Japanese (ja)
Other versions
JPS6048914B2 (en
Inventor
Kunio Aomura
Hiroshi Nakashiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9173377A priority Critical patent/JPS6048914B2/en
Publication of JPS5425676A publication Critical patent/JPS5425676A/en
Publication of JPS6048914B2 publication Critical patent/JPS6048914B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To make constant the junction plane area and to establish the diode having excellent reproducibility, by providing polycrystal Si having branching region on the insulation film covering the semiconductor substrate and by forming the PN junction while crossing the branching region in it.
COPYRIGHT: (C)1979,JPO&Japio
JP9173377A 1977-07-29 1977-07-29 semiconductor equipment Expired JPS6048914B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9173377A JPS6048914B2 (en) 1977-07-29 1977-07-29 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9173377A JPS6048914B2 (en) 1977-07-29 1977-07-29 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5425676A true JPS5425676A (en) 1979-02-26
JPS6048914B2 JPS6048914B2 (en) 1985-10-30

Family

ID=14034706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9173377A Expired JPS6048914B2 (en) 1977-07-29 1977-07-29 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6048914B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5647706U (en) * 1979-09-19 1981-04-28
JPS5879746A (en) * 1981-11-05 1983-05-13 Nec Corp Semiconductor integrated circuit
US4450470A (en) * 1978-02-10 1984-05-22 Nippon Electric Co., Ltd. Semiconductor integrated circuit device
JPS62202305U (en) * 1987-03-13 1987-12-23
JPS63115374A (en) * 1986-10-31 1988-05-19 Nec Corp Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450470A (en) * 1978-02-10 1984-05-22 Nippon Electric Co., Ltd. Semiconductor integrated circuit device
US5017503A (en) * 1978-02-10 1991-05-21 Nec Corporation Process for making a bipolar transistor including selective oxidation
JPS5647706U (en) * 1979-09-19 1981-04-28
JPS5931287Y2 (en) * 1979-09-19 1984-09-05 日立機電工業株式会社 Sand raking machine
JPS5879746A (en) * 1981-11-05 1983-05-13 Nec Corp Semiconductor integrated circuit
JPS63115374A (en) * 1986-10-31 1988-05-19 Nec Corp Semiconductor device
JPS62202305U (en) * 1987-03-13 1987-12-23

Also Published As

Publication number Publication date
JPS6048914B2 (en) 1985-10-30

Similar Documents

Publication Publication Date Title
JPS5356972A (en) Mesa type semiconductor device
JPS5425676A (en) Semiconductor device
JPS52129380A (en) Semiconductor device
JPS5420670A (en) Surface stabilizing method of semiconductor elements
JPS547891A (en) Manufacture for planar semiconductor light emission device
JPS5396666A (en) Manufacture of semiconductor device with pn junction
JPS5214382A (en) Semiconductor device
JPS5376760A (en) Semiconductor rectifying device
JPS5353254A (en) Semiconductor device
JPS5320857A (en) Semiconductor device
JPS5338981A (en) Semiconductor device
JPS52131455A (en) Semiconductor device
JPS5428566A (en) Manufacture of semiconductor device
JPS548982A (en) Semiconductor device
JPS53139476A (en) Manufacture of semiconductor device
JPS5350674A (en) Semiconductor device
JPS53100781A (en) Semiconductor device
JPS5382167A (en) Semiconductor device
JPS52103982A (en) Composite semiconductor device
JPS545618A (en) Semiconductor device
JPS53127280A (en) Semiconductor device
JPS52146175A (en) Semiconductor device
JPS53112691A (en) Photo coupling semiconductor device
JPS5421267A (en) Manufacture for semiconductor device
JPS5399871A (en) Device and manufacture of semiconductor