JPS548982A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS548982A
JPS548982A JP7518977A JP7518977A JPS548982A JP S548982 A JPS548982 A JP S548982A JP 7518977 A JP7518977 A JP 7518977A JP 7518977 A JP7518977 A JP 7518977A JP S548982 A JPS548982 A JP S548982A
Authority
JP
Japan
Prior art keywords
semiconductor device
substrate
reversely
junction
improve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7518977A
Other languages
Japanese (ja)
Inventor
Katsuhiro Oda
Takeshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7518977A priority Critical patent/JPS548982A/en
Publication of JPS548982A publication Critical patent/JPS548982A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the reverse dielectric-strength characteristics of a PN junction, by providing a concave part without any corner onto the surface of a unidirectional semiconductor substrate and by forming a reversely-conductive region against the substrate into the internal surface.
JP7518977A 1977-06-23 1977-06-23 Semiconductor device Pending JPS548982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7518977A JPS548982A (en) 1977-06-23 1977-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7518977A JPS548982A (en) 1977-06-23 1977-06-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS548982A true JPS548982A (en) 1979-01-23

Family

ID=13568994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7518977A Pending JPS548982A (en) 1977-06-23 1977-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS548982A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02111079A (en) * 1988-06-16 1990-04-24 Hyundai Electron Ind Co Ltd High voltage semiconductor device and its manufacture
US4977107A (en) * 1989-08-23 1990-12-11 Motorola Inc. Method for manufacturing semiconductor rectifier
WO2003081681A1 (en) * 2002-03-26 2003-10-02 Sanken Electric Co., Ltd. Semiconductor element and method for fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02111079A (en) * 1988-06-16 1990-04-24 Hyundai Electron Ind Co Ltd High voltage semiconductor device and its manufacture
US4977107A (en) * 1989-08-23 1990-12-11 Motorola Inc. Method for manufacturing semiconductor rectifier
WO2003081681A1 (en) * 2002-03-26 2003-10-02 Sanken Electric Co., Ltd. Semiconductor element and method for fabricating the same

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