JPS53126870A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53126870A
JPS53126870A JP4228677A JP4228677A JPS53126870A JP S53126870 A JPS53126870 A JP S53126870A JP 4228677 A JP4228677 A JP 4228677A JP 4228677 A JP4228677 A JP 4228677A JP S53126870 A JPS53126870 A JP S53126870A
Authority
JP
Japan
Prior art keywords
semiconductor device
shallow
junction
thyristors
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4228677A
Other languages
Japanese (ja)
Inventor
Katsuhiro Oda
Takeshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4228677A priority Critical patent/JPS53126870A/en
Publication of JPS53126870A publication Critical patent/JPS53126870A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Abstract

PURPOSE:To improve reverse dielectric strength characteristics of diodes, transistors and thyristors having shallow junctions by beforehand providing a deep junction around the shallow junction.
JP4228677A 1977-04-12 1977-04-12 Semiconductor device Pending JPS53126870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4228677A JPS53126870A (en) 1977-04-12 1977-04-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4228677A JPS53126870A (en) 1977-04-12 1977-04-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53126870A true JPS53126870A (en) 1978-11-06

Family

ID=12631792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4228677A Pending JPS53126870A (en) 1977-04-12 1977-04-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53126870A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5184201A (en) * 1989-06-07 1993-02-02 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Static induction transistor
JPH0739705A (en) * 1993-07-27 1995-02-10 Yondenko Corp Drainage apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5184201A (en) * 1989-06-07 1993-02-02 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Static induction transistor
JPH0739705A (en) * 1993-07-27 1995-02-10 Yondenko Corp Drainage apparatus

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