JPS5521187A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5521187A
JPS5521187A JP9524178A JP9524178A JPS5521187A JP S5521187 A JPS5521187 A JP S5521187A JP 9524178 A JP9524178 A JP 9524178A JP 9524178 A JP9524178 A JP 9524178A JP S5521187 A JPS5521187 A JP S5521187A
Authority
JP
Japan
Prior art keywords
region
type semiconductor
gate
insulator
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9524178A
Other languages
Japanese (ja)
Other versions
JPS6212665B2 (en
Inventor
Yasutaka Horiba
Takao Nakano
Shuichi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9524178A priority Critical patent/JPS5521187A/en
Publication of JPS5521187A publication Critical patent/JPS5521187A/en
Publication of JPS6212665B2 publication Critical patent/JPS6212665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Abstract

PURPOSE:To improve high frequency property by surrounding a gate by an insulator and simultaneously to form a belt-shaped gate region just under a drain region and further by surrounding a part of gate region by an insulator. CONSTITUTION:N channel junction-type SIT 102 as channel region and P-type semiconductor region 14 as gate region are surrounded by an insulator 17. In a part of the channel region just under the N-type semiconductor region as drain region, the P-type semiconductor region 16, which is to form a part of the gate region, is formed so as to connect the P-type semiconductor region 14. The channel region will be the P-type semiconductor region 14 and 16 and the N-type semiconductor region 12 surrounded by the insulator 17. This channel region is divided in two by the P-type semiconductor region 16. The P-type semiconductor 14 and 16 act as the gate region.
JP9524178A 1978-08-03 1978-08-03 Semiconductor device Granted JPS5521187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9524178A JPS5521187A (en) 1978-08-03 1978-08-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9524178A JPS5521187A (en) 1978-08-03 1978-08-03 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5521187A true JPS5521187A (en) 1980-02-15
JPS6212665B2 JPS6212665B2 (en) 1987-03-19

Family

ID=14132250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9524178A Granted JPS5521187A (en) 1978-08-03 1978-08-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5521187A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095177U (en) * 1983-12-06 1985-06-28 内田油圧機器工業株式会社 Axial piston type hydraulic motor device
JP2008080812A (en) * 2007-11-09 2008-04-10 Dainippon Printing Co Ltd Bankbook
JP2014126020A (en) * 2012-12-27 2014-07-07 Kawasaki Heavy Ind Ltd Axial piston motor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5086988A (en) * 1973-11-30 1975-07-12
JPS5425172A (en) * 1977-07-27 1979-02-24 Nippon Gakki Seizo Kk Longitudinal junction field effect transistor
JPS59981A (en) * 1982-06-25 1984-01-06 Nec Corp Drive circuit for laser diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5086988A (en) * 1973-11-30 1975-07-12
JPS5425172A (en) * 1977-07-27 1979-02-24 Nippon Gakki Seizo Kk Longitudinal junction field effect transistor
JPS59981A (en) * 1982-06-25 1984-01-06 Nec Corp Drive circuit for laser diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095177U (en) * 1983-12-06 1985-06-28 内田油圧機器工業株式会社 Axial piston type hydraulic motor device
JP2008080812A (en) * 2007-11-09 2008-04-10 Dainippon Printing Co Ltd Bankbook
JP2014126020A (en) * 2012-12-27 2014-07-07 Kawasaki Heavy Ind Ltd Axial piston motor

Also Published As

Publication number Publication date
JPS6212665B2 (en) 1987-03-19

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