JPS5478675A - Junction-type field effect transistor - Google Patents
Junction-type field effect transistorInfo
- Publication number
- JPS5478675A JPS5478675A JP14627377A JP14627377A JPS5478675A JP S5478675 A JPS5478675 A JP S5478675A JP 14627377 A JP14627377 A JP 14627377A JP 14627377 A JP14627377 A JP 14627377A JP S5478675 A JPS5478675 A JP S5478675A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- layer
- diffusion
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To increase the specific resistance of the N-type epitaxial layer and thus to obtain a J-FET featuring a high dielectric strength and high mutual conductance, by forming previously the N+-type buried region on a partial surface of the P-type buried region when the N-type layer is epitaxial-grown on the substrate to which the P-type buried region is provided.
CONSTITUTION: N+-type layer 1 is formed through diffusion on the surface of N-- type substrate 2, and also two P-type regions 3' are formed through diffusion on the substrate surface with the fixed length 4 to be used later as buried gate region 3. N+-type buried channel region 5' is formed through diffusion within region 3', and N-type layer 6 is epitaxial grown on the entire surface. After this, circular P-type lead-out region 7 connecting to region 3' is formed through diffusion within layer 6 to secure conduction up to the surface for region 3', along with P-type gate region 8' corresponding to width 4 and enclosed by region 7 formed within layer 6 plus N+-type source region 9 surrounding region 8' formed. Thus, region 5' is provided within region 3', thus increasing the specific resistance of layer 6 with its reduced thickness.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14627377A JPS5478675A (en) | 1977-12-05 | 1977-12-05 | Junction-type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14627377A JPS5478675A (en) | 1977-12-05 | 1977-12-05 | Junction-type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5478675A true JPS5478675A (en) | 1979-06-22 |
| JPS6129558B2 JPS6129558B2 (en) | 1986-07-07 |
Family
ID=15403997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14627377A Granted JPS5478675A (en) | 1977-12-05 | 1977-12-05 | Junction-type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5478675A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6226866A (en) * | 1985-07-26 | 1987-02-04 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Double injection fet |
| JP2002299349A (en) * | 2001-03-30 | 2002-10-11 | Denso Corp | Silicon carbide semiconductor device and its manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4911076A (en) * | 1972-05-25 | 1974-01-31 | ||
| JPS5244577A (en) * | 1975-10-06 | 1977-04-07 | Sony Corp | Junction type field effect transistor |
| JPS52128080A (en) * | 1976-04-20 | 1977-10-27 | Nec Corp | Junction-type field effect transistor |
-
1977
- 1977-12-05 JP JP14627377A patent/JPS5478675A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4911076A (en) * | 1972-05-25 | 1974-01-31 | ||
| JPS5244577A (en) * | 1975-10-06 | 1977-04-07 | Sony Corp | Junction type field effect transistor |
| JPS52128080A (en) * | 1976-04-20 | 1977-10-27 | Nec Corp | Junction-type field effect transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6226866A (en) * | 1985-07-26 | 1987-02-04 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Double injection fet |
| JP2002299349A (en) * | 2001-03-30 | 2002-10-11 | Denso Corp | Silicon carbide semiconductor device and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6129558B2 (en) | 1986-07-07 |
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