JPS54105978A - Junction-type field effect transistor - Google Patents
Junction-type field effect transistorInfo
- Publication number
- JPS54105978A JPS54105978A JP1236278A JP1236278A JPS54105978A JP S54105978 A JPS54105978 A JP S54105978A JP 1236278 A JP1236278 A JP 1236278A JP 1236278 A JP1236278 A JP 1236278A JP S54105978 A JPS54105978 A JP S54105978A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance
- type
- source
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To enahnce the high-frequency property of J-FET by specifying the relative resistance of the resistance layers when two resistance layers are laminated to the channel between the source and the drain and also setting the relative resistance of the drain-side resistance layer to 1.5∼4 times as high as that of the source-side resistance layer.
CONSTITUTION: N-type layer 18 to be the resistance layer and N--type layer 2 also to be the resistance layer are laminated on N+-type semiconductor substrate 1 to be the drain region respectively, and then plural units of P+-type gate region 3 are formed through diffision within layer 2. The entire surface is covered with insulator film 5 with the opening drilled, and gate electrode 6 is attached on region 3. At the same time, the opening is drilled to film 5 between regions 3, and shallow N+-type source region 4 is formed through diffusion within kayer 2 with source electrode 7 attached. In such constitution, layer 2 to be the channel features the relative resistance of 2 set, and the relative resistance of layer 18 is set to 1∼4Ωcm or 4∼6Ωcm with these ratios set to 1.5∼4 prescribed. Thus, the steady gain can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1236278A JPS54105978A (en) | 1978-02-08 | 1978-02-08 | Junction-type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1236278A JPS54105978A (en) | 1978-02-08 | 1978-02-08 | Junction-type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54105978A true JPS54105978A (en) | 1979-08-20 |
Family
ID=11803154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1236278A Pending JPS54105978A (en) | 1978-02-08 | 1978-02-08 | Junction-type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54105978A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5568677A (en) * | 1978-11-17 | 1980-05-23 | Nec Corp | Junction type field effect semiconductor |
US4458259A (en) * | 1981-11-12 | 1984-07-03 | Gte Laboratories Incorporated | Etched-source static induction transistor |
-
1978
- 1978-02-08 JP JP1236278A patent/JPS54105978A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5568677A (en) * | 1978-11-17 | 1980-05-23 | Nec Corp | Junction type field effect semiconductor |
US4458259A (en) * | 1981-11-12 | 1984-07-03 | Gte Laboratories Incorporated | Etched-source static induction transistor |
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