JPS54105978A - Junction-type field effect transistor - Google Patents

Junction-type field effect transistor

Info

Publication number
JPS54105978A
JPS54105978A JP1236278A JP1236278A JPS54105978A JP S54105978 A JPS54105978 A JP S54105978A JP 1236278 A JP1236278 A JP 1236278A JP 1236278 A JP1236278 A JP 1236278A JP S54105978 A JPS54105978 A JP S54105978A
Authority
JP
Japan
Prior art keywords
layer
resistance
type
source
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1236278A
Other languages
Japanese (ja)
Inventor
Kiyoshi Aoki
Toshio Shino
Hisao Kamo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1236278A priority Critical patent/JPS54105978A/en
Publication of JPS54105978A publication Critical patent/JPS54105978A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To enahnce the high-frequency property of J-FET by specifying the relative resistance of the resistance layers when two resistance layers are laminated to the channel between the source and the drain and also setting the relative resistance of the drain-side resistance layer to 1.5∼4 times as high as that of the source-side resistance layer.
CONSTITUTION: N-type layer 18 to be the resistance layer and N--type layer 2 also to be the resistance layer are laminated on N+-type semiconductor substrate 1 to be the drain region respectively, and then plural units of P+-type gate region 3 are formed through diffision within layer 2. The entire surface is covered with insulator film 5 with the opening drilled, and gate electrode 6 is attached on region 3. At the same time, the opening is drilled to film 5 between regions 3, and shallow N+-type source region 4 is formed through diffusion within kayer 2 with source electrode 7 attached. In such constitution, layer 2 to be the channel features the relative resistance of 2 set, and the relative resistance of layer 18 is set to 1∼4Ωcm or 4∼6Ωcm with these ratios set to 1.5∼4 prescribed. Thus, the steady gain can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP1236278A 1978-02-08 1978-02-08 Junction-type field effect transistor Pending JPS54105978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1236278A JPS54105978A (en) 1978-02-08 1978-02-08 Junction-type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1236278A JPS54105978A (en) 1978-02-08 1978-02-08 Junction-type field effect transistor

Publications (1)

Publication Number Publication Date
JPS54105978A true JPS54105978A (en) 1979-08-20

Family

ID=11803154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1236278A Pending JPS54105978A (en) 1978-02-08 1978-02-08 Junction-type field effect transistor

Country Status (1)

Country Link
JP (1) JPS54105978A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568677A (en) * 1978-11-17 1980-05-23 Nec Corp Junction type field effect semiconductor
US4458259A (en) * 1981-11-12 1984-07-03 Gte Laboratories Incorporated Etched-source static induction transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568677A (en) * 1978-11-17 1980-05-23 Nec Corp Junction type field effect semiconductor
US4458259A (en) * 1981-11-12 1984-07-03 Gte Laboratories Incorporated Etched-source static induction transistor

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