JPS5244577A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS5244577A
JPS5244577A JP12042075A JP12042075A JPS5244577A JP S5244577 A JPS5244577 A JP S5244577A JP 12042075 A JP12042075 A JP 12042075A JP 12042075 A JP12042075 A JP 12042075A JP S5244577 A JPS5244577 A JP S5244577A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
junction type
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12042075A
Other languages
Japanese (ja)
Other versions
JPS5916427B2 (en
Inventor
Akiyasu Ishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12042075A priority Critical patent/JPS5916427B2/en
Publication of JPS5244577A publication Critical patent/JPS5244577A/en
Publication of JPS5916427B2 publication Critical patent/JPS5916427B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To form a buried ion implantation region of second conductivity type and of an impurity concentration higher than that of adjoining regions within the channel of second conductivity type formed within a gate region of first conductivity type, thereby obtaining a lateral J-FET of high mutual conductance and high dielectric strength.
COPYRIGHT: (C)1977,JPO&Japio
JP12042075A 1975-10-06 1975-10-06 Junction field effect transistor Expired JPS5916427B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12042075A JPS5916427B2 (en) 1975-10-06 1975-10-06 Junction field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12042075A JPS5916427B2 (en) 1975-10-06 1975-10-06 Junction field effect transistor

Publications (2)

Publication Number Publication Date
JPS5244577A true JPS5244577A (en) 1977-04-07
JPS5916427B2 JPS5916427B2 (en) 1984-04-16

Family

ID=14785771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12042075A Expired JPS5916427B2 (en) 1975-10-06 1975-10-06 Junction field effect transistor

Country Status (1)

Country Link
JP (1) JPS5916427B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478675A (en) * 1977-12-05 1979-06-22 Nec Corp Junction-type field effect transistor
JPS55105379A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Field-effect transistor
JPS5723272A (en) * 1980-07-16 1982-02-06 Mitsubishi Electric Corp Junction type field effect transistor
JPS5832473A (en) * 1981-08-20 1983-02-25 Matsushita Electric Ind Co Ltd Field effect transistor and manufacture thereof
JPS58129651U (en) * 1982-12-28 1983-09-02 松下電子工業株式会社 Junction field effect transistor
JPS60257180A (en) * 1984-06-01 1985-12-18 Sony Corp Manufacture of junction-type field effect semiconductor device
JPH0236569A (en) * 1988-07-26 1990-02-06 Nec Corp Semiconductor device
US20130056801A1 (en) * 2010-05-17 2013-03-07 Panasonic Corporation Junction field effect transistor and analog circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3000246U (en) * 1994-01-18 1994-08-02 株式会社芋谷工業 Container with table

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478675A (en) * 1977-12-05 1979-06-22 Nec Corp Junction-type field effect transistor
JPS6129558B2 (en) * 1977-12-05 1986-07-07 Nippon Electric Co
JPS55105379A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Field-effect transistor
JPS5723272A (en) * 1980-07-16 1982-02-06 Mitsubishi Electric Corp Junction type field effect transistor
JPS5832473A (en) * 1981-08-20 1983-02-25 Matsushita Electric Ind Co Ltd Field effect transistor and manufacture thereof
JPS58129651U (en) * 1982-12-28 1983-09-02 松下電子工業株式会社 Junction field effect transistor
JPS60257180A (en) * 1984-06-01 1985-12-18 Sony Corp Manufacture of junction-type field effect semiconductor device
JPH0236569A (en) * 1988-07-26 1990-02-06 Nec Corp Semiconductor device
US20130056801A1 (en) * 2010-05-17 2013-03-07 Panasonic Corporation Junction field effect transistor and analog circuit
US9269830B2 (en) * 2010-05-17 2016-02-23 Panasonic Intellectual Property Management Co., Ltd. Junction field effect transistor and analog circuit

Also Published As

Publication number Publication date
JPS5916427B2 (en) 1984-04-16

Similar Documents

Publication Publication Date Title
JPS5676574A (en) Schottky injection electrode type semiconductor device
JPS5244577A (en) Junction type field effect transistor
JPS5316581A (en) Insulated gate type field effect transistor
JPS5333074A (en) Production of complementary type insulated gate field effect semiconductor device
JPS52135685A (en) Semiconductor device
JPS5382179A (en) Field effect transistor
JPS5418684A (en) Manufacture of semiconductor device
JPS52128080A (en) Junction-type field effect transistor
JPS5368987A (en) Semiconductor device
JPS5265686A (en) Production of mos semiconductor device
JPS5242080A (en) Micro channel type insulated gate field effect transistor and process for productin thereof
JPS5588378A (en) Semiconductor device
JPS5286779A (en) Semiconductor device
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS5347783A (en) Production of junction type field effect transistor
JPS5347278A (en) Insulated gate type field effect transistor
JPS547881A (en) Mos field effect transistor
JPS52155980A (en) Insulated gate type field effect semiconductor device
JPS51135381A (en) Semiconductor device and its manufacturing method
JPS52136583A (en) Mos type semiconductor device
JPS5268383A (en) Manufacture of semiconductor device
JPS5411685A (en) Junction type field effect semiconductor device
JPS5245281A (en) Field effect transistor of vertical junction type
JPS554912A (en) Fieldeffect lateral transistor
JPS6461953A (en) Mos transistor