JPS55105379A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS55105379A
JPS55105379A JP1369479A JP1369479A JPS55105379A JP S55105379 A JPS55105379 A JP S55105379A JP 1369479 A JP1369479 A JP 1369479A JP 1369479 A JP1369479 A JP 1369479A JP S55105379 A JPS55105379 A JP S55105379A
Authority
JP
Japan
Prior art keywords
layer
gate
neighborhood
concentration
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1369479A
Other languages
Japanese (ja)
Inventor
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1369479A priority Critical patent/JPS55105379A/en
Publication of JPS55105379A publication Critical patent/JPS55105379A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve the characteristic of FET by making the impurity concentration of the channel in the neighborhood of gate layer different from that of the channel in the neighborhood of depletion layer.
CONSTITUTION: The n epitaxial layers 12, 12' with specific resistances 0.2Ω, 1.5Ω and SiO2 film 13 are laminated on the p-type Si substrate 11 and are isolated by the p+-layer 14. Next the p+-layer 15 and the n+-layer 16 that reaches the layer 12 are selectively formed in the layer 12'. Last the Al electrodes 17 are selectively provided. The impurity concentration of the layer 12 is greater than that of the layer 12', the gate layer 15 is formed in the layer 12'. Thus the gate capacitance can be reduced. Since the concentration of layer 12' is lower, the with standing voltage across the gate-source is higher, and because most drain current passes through the n-layer 12, low-frequency noise is decreased. Also, since a breakdown voltage in the neighborhood of the surface can be made higher to increase the concentration of the n-layer 12, gm is also improved.
COPYRIGHT: (C)1980,JPO&Japio
JP1369479A 1979-02-07 1979-02-07 Field-effect transistor Pending JPS55105379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1369479A JPS55105379A (en) 1979-02-07 1979-02-07 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1369479A JPS55105379A (en) 1979-02-07 1979-02-07 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS55105379A true JPS55105379A (en) 1980-08-12

Family

ID=11840293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1369479A Pending JPS55105379A (en) 1979-02-07 1979-02-07 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS55105379A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244577A (en) * 1975-10-06 1977-04-07 Sony Corp Junction type field effect transistor
JPS5339880A (en) * 1976-09-24 1978-04-12 Hitachi Ltd Field effect type semiconductor device and its production

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244577A (en) * 1975-10-06 1977-04-07 Sony Corp Junction type field effect transistor
JPS5339880A (en) * 1976-09-24 1978-04-12 Hitachi Ltd Field effect type semiconductor device and its production

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