JPS54101680A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54101680A
JPS54101680A JP844878A JP844878A JPS54101680A JP S54101680 A JPS54101680 A JP S54101680A JP 844878 A JP844878 A JP 844878A JP 844878 A JP844878 A JP 844878A JP S54101680 A JPS54101680 A JP S54101680A
Authority
JP
Japan
Prior art keywords
crystal
poly
layers
constitution
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP844878A
Other languages
Japanese (ja)
Inventor
Hidenobu Mochizuki
Takashi Shimada
Koji Otsu
Yoshimi Hirata
Jiro Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP844878A priority Critical patent/JPS54101680A/en
Publication of JPS54101680A publication Critical patent/JPS54101680A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce a threshold voltage by forming respective gate electrodes of P(N) channel MOS transistors by P(N)-type impurity-doped poly-crystal Si layers. CONSTITUTION:The gate electrode of a N channel MOS transistor, namely, poly- crystal Si layer 11 is formed with N-type impurity-doped poly-crystal Si, and the other P channel MOS transistor is formed similarly. Both poly-crystal Si layers 11 and 12 are extended near channel stopper region 10. In this constitution, since respective gates are constituted by impurity-doped poly-crystal Si layers 11 and 12, the threshold voltage can be reduced. Meanwhile, this constitution is advantageous to improve an integration degree because electrodes 14S, 14D 15S and 15D which are taken out from souce and drain regions are formed by conductive poly-crystal Si layers.
JP844878A 1978-01-27 1978-01-27 Semiconductor device Pending JPS54101680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP844878A JPS54101680A (en) 1978-01-27 1978-01-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP844878A JPS54101680A (en) 1978-01-27 1978-01-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54101680A true JPS54101680A (en) 1979-08-10

Family

ID=11693399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP844878A Pending JPS54101680A (en) 1978-01-27 1978-01-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54101680A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650574A (en) * 1979-10-01 1981-05-07 Seiko Epson Corp Silicon gate mos field effect transistor
JPS5789253A (en) * 1980-11-25 1982-06-03 Seiko Epson Corp Semiconductor device
JPH01157571A (en) * 1988-11-18 1989-06-20 Seiko Epson Corp Manufacture of semiconductor device
JPH0260168A (en) * 1988-08-25 1990-02-28 Nec Corp Semiconductor device
JPH02197166A (en) * 1989-10-20 1990-08-03 Seiko Epson Corp High breakdown strength mos type semiconductor device
US5612557A (en) * 1986-10-27 1997-03-18 Seiko Epson Corporation Semiconductor device having an inter-layer insulating film disposed between two wiring layers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123287A (en) * 1973-03-28 1974-11-26
JPS5127073A (en) * 1974-08-21 1976-03-06 Suwa Seikosha Kk Handotaisochino seizohoho
JPS5133571A (en) * 1974-09-14 1976-03-22 Tokyo Shibaura Electric Co Mos toranjisuta no seizohoho
JPS51130183A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic and its process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123287A (en) * 1973-03-28 1974-11-26
JPS5127073A (en) * 1974-08-21 1976-03-06 Suwa Seikosha Kk Handotaisochino seizohoho
JPS5133571A (en) * 1974-09-14 1976-03-22 Tokyo Shibaura Electric Co Mos toranjisuta no seizohoho
JPS51130183A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic and its process

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650574A (en) * 1979-10-01 1981-05-07 Seiko Epson Corp Silicon gate mos field effect transistor
JPS5789253A (en) * 1980-11-25 1982-06-03 Seiko Epson Corp Semiconductor device
US5612557A (en) * 1986-10-27 1997-03-18 Seiko Epson Corporation Semiconductor device having an inter-layer insulating film disposed between two wiring layers
JPH0260168A (en) * 1988-08-25 1990-02-28 Nec Corp Semiconductor device
JPH01157571A (en) * 1988-11-18 1989-06-20 Seiko Epson Corp Manufacture of semiconductor device
JPH02197166A (en) * 1989-10-20 1990-08-03 Seiko Epson Corp High breakdown strength mos type semiconductor device

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