JPS5650574A - Silicon gate mos field effect transistor - Google Patents

Silicon gate mos field effect transistor

Info

Publication number
JPS5650574A
JPS5650574A JP12652579A JP12652579A JPS5650574A JP S5650574 A JPS5650574 A JP S5650574A JP 12652579 A JP12652579 A JP 12652579A JP 12652579 A JP12652579 A JP 12652579A JP S5650574 A JPS5650574 A JP S5650574A
Authority
JP
Japan
Prior art keywords
gate
type
field effect
effect transistor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12652579A
Other languages
Japanese (ja)
Inventor
Yasuo Katsuyama
Toshiyuki Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12652579A priority Critical patent/JPS5650574A/en
Publication of JPS5650574A publication Critical patent/JPS5650574A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the adaptability of a silicon gate MOS field effect transistor as a reference voltage source and to improve the yield of the transistor by forming a pair of equal polarity silicon gate MOSFETs having different gate work functions and stabilizing the threshold voltage diffrence therebetween against the power supply voltage variation. CONSTITUTION:In an N channel MOSFET, a gate oxide film is formed on a P type substrate 40, a P type impurity is diffused therein, and a P type polycrystalline silicon 404 on the gate film 403. An oxide film 505 is formed as a mask on the gate electrode by considering the displacement of the mask, an N type impurity having sufficiently high density as compared with P type impurity is superimposed and diffused, and an N type polycrystalline silicon layer is thus formed, and the film 505 is etched. Then, a gate is formed of reverse conductivity type semiconductor to the semiconductor forming the source and the drain.
JP12652579A 1979-10-01 1979-10-01 Silicon gate mos field effect transistor Pending JPS5650574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12652579A JPS5650574A (en) 1979-10-01 1979-10-01 Silicon gate mos field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12652579A JPS5650574A (en) 1979-10-01 1979-10-01 Silicon gate mos field effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP10842587A Division JPS62271473A (en) 1987-05-01 1987-05-01 Silicon gate mos field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5650574A true JPS5650574A (en) 1981-05-07

Family

ID=14937356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12652579A Pending JPS5650574A (en) 1979-10-01 1979-10-01 Silicon gate mos field effect transistor

Country Status (1)

Country Link
JP (1) JPS5650574A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798785A1 (en) * 1996-03-29 1997-10-01 STMicroelectronics S.r.l. High-voltage-resistant MOS transistor, and corresponding manufacturing process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101680A (en) * 1978-01-27 1979-08-10 Sony Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101680A (en) * 1978-01-27 1979-08-10 Sony Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798785A1 (en) * 1996-03-29 1997-10-01 STMicroelectronics S.r.l. High-voltage-resistant MOS transistor, and corresponding manufacturing process
US5977591A (en) * 1996-03-29 1999-11-02 Sgs-Thomson Microelectronics S.R.L. High-voltage-resistant MOS transistor, and corresponding manufacturing process

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